We studied the flux pinning properties of BaZrO 3 -doped YBa 2 Cu 3 O 7−x and BaSnO 3 -doped YBa 2 Cu 3 O 7−x films. We found that BaSnO 3 -doped films showed very high global pinning forces, F p , of 28.3 GN m −3 (77 K, B c) and 103 GN m −3 (65 K, B c), twice that of BaZrO 3 -doped films. Transmission electron microscopy analysis showed that, in both films, nanorods of the dopant phase were incorporated. The BaSnO 3 nanorods were nearly straight but the BaZrO 3 nanorods became curved with the increasing film thickness.

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BaZrO3 nanorods are known to be effective pinning centers as c-axis-correlated pinning centers. Furthermore, BaZrO3 nanorods in REBa2Cu3Oy (RE: rare-earth element) films are formed by self-assembled stacking of BaZrO3 using a target mixture of a superconductor and BaZrO3 for pulsed-laser deposition, which is a very easy fabrication technique. The density of BaZrO3 nanorods in YBa2Cu3Oy (YBCO) films can be controlled by varying the BaZrO3 content in a target. The BaZrO3 addition has two functions for superconductivity; one is the improvement of pinning forces due to the addition of pinning centers and the other is Tc degradation. The optimum BaZrO3 addition for Jc improvement in magnetic fields is found to be around 3 wt% because of a trade-off between the two functions described above. Furthermore, the length of BaZrO3 nanorods is found to be controlled using two types of target: pure YBCO and a mixture of YBCO and BaZrO3. Varying the BaZrO3 nanorod length has an effect on the pinning mechanism. In particular, magnetic field angle dependences of Jc are varied from c-axis-correlated pinning to nearly random pinning by changing the nanorod length. The magnetic field at the crossover of the pinning mechanism seems to be adjusted by the BaZrO3 nanorod length.