Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO 2 )–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO 2 are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. The possible competing mechanisms, including He ion–induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.

Hydrogen evolution, corrosion, and dendrite formation in the Zn anodes limit their practical applications in aqueous Zn metal batteries. Herein, we propose an interfacial chemistry regulation strategy that uses hybrid electrolytes of water and a polar aprotic N,N-dimethylformamide to modify the Zn 2+solvation structure and in situ form a robust and Zn 2+ -conducting Zn 5 (CO 3 ) 2 (OH) 6 solid electrolyte interphase (SEI) on the Zn surface to achieve stable and dendrite-free Zn plating/stripping over a wide temperature range. As confirmed by 67 Zn nuclear magnetic resonance relaxometry, electrochemical characterizations, and molecular dynamics simulation, the electrochemically and thermally stable Zn 5 (OH) 6 (CO 3 ) 2 -contained SEI achieved a high ionic conductivity of 0.04 to 1.27 mS cm −1 from −30 to 70 °C and a thermally activated fast Zn 2+ migration through the [010] plane. Consequently, extremely stable Zn-ion hybrid capacitors in hybrid electrolytes are demonstrated with high capacity retentions and Coulombic efficiencies over 14,000, 10,000, and 600 cycles at 25, −20, and 70 °C, respectively.

In situ reflective high-energy electron diffraction (RHEED) is widely used to monitor the surface crystalline state during thin-film growth by molecular beam epitaxy (MBE) and pulsed laser deposition. With the recent development of machine learning (ML), ML-assisted analysis of RHEED videos aids in interpreting the complete RHEED data of oxide thin films. The quantitative analysis of RHEED data allows us to characterize and categorize the growth modes step by step, and extract hidden knowledge of the epitaxial film growth process. In this study, we employed the ML-assisted RHEED analysis method to investigate the growth of 2D thin films of transition metal dichalcogenides (ReSe2) on graphene substrates by MBE. Principal component analysis (PCA) and K-means clustering were used to separate statistically important patterns and visualize the trend of pattern evolution without any notable loss of information. Using the modified PCA, we could monitor the diffraction intensity of solely the ReSe2 layers by filtering out the substrate contribution. These findings demonstrate that ML analysis can be successfully employed to examine and understand the film-growth dynamics of 2D materials. Further, the ML-based method can pave the way for the development of advanced real-time monitoring and autonomous material synthesis techniques. Graphical Abstract

Semiconducting materials offer promising opportunities as an ideal platform for localized surface plasmon resonance (LSPR)-free surface-enhanced Raman spectroscopy (SERS)-based molecular detection. However, conventional semiconductor-based SERS substrates have various drawbacks that...

Vertical van der Waals heterostructures (vdWhs), which are made by layer-by-layer stacking of two-dimensional (2D) materials, offer great opportunities for the development of extraordinary physics and devices such as topological superconductivity, robust quantum Hall phenomenon, electron–hole pair condensation, Coulomb drag, and tunneling devices. However, the size of vdWhs is still limited to the order of a few micrometers, which restricts the large-scale roll-to-roll processes for industrial applications. Herein, we report the sequential growth of a 14 in. vertical vdWhs on a rollable Al foil via chemical vapor deposition. By supplying chalcogen precursors to liquid transition-metal precursor-coated Al foils, we grew a wide range of individual 2D transition-metal dichalcogenide (TMD) films, including MoS2, VS2, ReS2, WS2, SnS2, WSe2, and vanadium-doped MoS2. Additionally, by repeating the growth process, we successfully achieved the layer-by-layer growth of ReS2/MoS2 and SnS2/ReS2/MoS2 vdWhs. The chemically inert Al native oxide layer inhibits the diffusion of chalcogen and metal atoms into Al foils, allowing for the growth of diverse TMDs and their vdWhs. The conductive Al substrate enables the effective use of vdWhs/Al as a hydrogen evolution reaction electrocatalyst with a transfer-free process. This work provides a robust route for the commercialization of 2D TMDs and their vdWhs at a low cost.