We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 -300 K). We measured the domain wall velocity under various electric fields and found that the velocity data is strongly nonlinear with electric fields, especially at low temperature. We found that, as one of surface growth problems, our domain wall velocity data from ferroelectric epitaxial film could be classified into the creep, depinning, and flow regimes due to competition between disorder and elasticity. The measured values of velocity and dynamical exponents indicate that the ferroelectric domain walls in the epitaxial films are fractal and pinned by a disorder-induced local field.

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We report the simultaneous and selective synthesis of single-crystalline Co(n)Si NWs (n = 1-3) and their corresponding crystal structures--simple cubic (CoSi), orthorhombic (Co(2)Si), and face-centered cubic (Co(3)Si)--following a composition change. Co(n)Si NWs were synthesized by placing the sapphire substrates along a temperature gradient. The synthetic process is a successful demonstration of tuning the chemical composition in Co(n)Si NWs. The synthesis and detailed crystal structure of single-crystalline Co(2)Si and Co(3)Si are reported for the first time including the bulk and the nanostructure phases. The electrical and magnetic properties of Co(2)Si NWs are investigated and compared with those of CoSi NWs.

In general, ilmenite FeTiO 3 is synthesized by solid-state reaction at very high pressure and high temperature. Synthesis of FeTiO 3 is not an easy task as the Fe 2 þ ions are not stable. Therefore, it is really challenging to prepare this material. In this work nano-ilmenite FeTiO 3 was synthesized by the sol-gel method. Structural, optical and magnetic characterizations were performed. The bandgap of FeTiO 3 was determined to be 2.8 eV showing FeTiO 3 as suitable wide bandgap material for technological applications. The FeTiO 3 nanoparticles exhibit weak ferromagnetic properties at and below room temperature. The Né el temperature was observed to be around 52 K.

Impact of ultrathin transition metal buffer layers on Fe 3 O 4 thin films J. Appl. Phys. 107, 09B101 (2010); 10.1063/1.3350910 CPP transport properties of polycrystalline Fe 3 O 4 thin films sputtered on Cu underlayers J. Appl. Phys. 97, 10C315 (2005); 10.1063/1.1847191Fabrication and magnetoresistive effect of current perpendicular to plane devices using half-metallic Fe 3 O 4 thin films on metallic films