Electronic-type-separated SWCNTs thin-films were used to demonstrate that the strength of the redox potential of dopants influences their electrical conductivity enhancement.

The structural and electrical properties of electronic-type-separated (metallic and semiconducting) single wall carbon nanotube (SWCNT) thin-films have been investigated after irradiation with 150 keV 11B+ and 150 keV 31P+ with fluences ranging from 1012 to 1015 ions/cm2. Raman spectroscopy results indicate that the ratio of the Raman D to G′ band peak intensities (D/G′) is a more sensitive indicator of SWCNT structural modification induced by ion irradiation by one order of magnitude compared to the ratio of the Raman D to G band peak intensities (D/G). The increase in sheet resistance (Rs) of the thin-films follows a similar trend as the D/G′ ratio, suggesting that the radiation induced variation in bulk electrical transport for both electronic-types is equal and related to localized defect generation. The characterization results for the various samples are compared based on the displacement damage dose (DDD) imparted to the sample, which is material and damage source independent. Therefore, it is possible to extend the analysis to include data from irradiation of transferred CVD-graphene films on SiO2/Si substrates using 35 keV C+ ions, and compare the observed changes at equivalent levels of ion irradiation-induced damage to that observed in the SWCNT thin-film samples. Ultimately, a model is developed for the prediction of the radiation response of nanostructured carbon materials based on the DDD for any incident ion with low-energy recoil spectra. The model is also related to the defect concentration, and subsequently the effective defect-to-defect length, and yields a maximum defect concentration (minimum defect-to-defect length) above which the bulk electrical transport properties in SWCNT thin-films and large graphene-based electronic devices rapidly degrade when exposed to harsh environments.

A reagent-based treatment method was developed for the removal of sodium dodecyl sulfate (SDS) from aqueous dispersions of single-wall carbon nanotubes (SWCNTs). Based on a survey of various reagents, organic solvents emerged as the most effective at interrupting the SDS:SWCNT interaction without producing deleterious side reactions or causing precipitation of the surfactant. Specifically, treatment with acetone or acetonitrile allows for the facile isolation of SWCNTs with near complete removal of SDS through vacuum filtration, resulting in a 100x reduction in processing time. These findings were validated via quantitative analysis using thermogravimetric analysis, Raman spectroscopy, 4-point probe electrical measurement, and X-ray photoelectron spectroscopy. Subsequent thermal oxidation further enhances the purity of the reagent treated samples and yields bulk SWCNT samples with >95% carbonaceous purity. The proposed reagent treatment method thus demonstrates potential for large volume SWCNT processing.

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