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We have demonstrated a'functional Pnp heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic vapor phase epitaxy (MOCVD) grown M0.~G~:AS~o,o~G~.9TASo.wN0.01 HBT takes advantage of the narrower b~dgap energy @g= 1.25ev) of Ino.03Ga0,wAs0.wNo.01, which is lattice matched to GaAs. Compared with the AIo.3Ga0.7.4s/GaAs material system, the AIo.3Ga0.7As/Ino.03Ga0.97As0.99N0.01 material system has a lm~er conduction bad Offset, while the v~ence b~d Offset remtins comparable. Thk characteristic band alignment is very suitable for Pnp HBT applications. The device's peak -current gain is 23 and it h"asa turn on voltage of 0.77V, which is 0.25V lower than in a comparable Pnp Alo,3G%.TAs/GaAs HBT.