Centimeter-size 2D layered Pb-free (CH3NH3)2MnCl4 single crystal was grown by using different ways and proved to have good luminous via fabricating LED device.
The optoelectronic performances of MAPbI 3 are related to film morphology and crystal orientation. However, it is difficult to directly quantify the optoelectronic anisotropy in thin films because controlling growth-oriented grains and measuring the optoelectronic difference within micro−nono regions have great technological challenges. Here, taking advantages of the pseudo-cubic morphology of MAPbI 3 single crystals (SCs) exposed with ( 110), (002), and (200) facets, the optoelectronic anisotropies are compared. It reveals that the periodic positive and negative potential distributions at the outermost (110) surface, the orientations of MA + dipoles, and the stacking of PbI 6 octahedrons ensure (110) planes have lower defect densities (V I + , V MA − , I − , MA + , or I i − , etc.), which therefore enhance photo recycling, deduce the dark current, and increase the photocurrent. Besides, the periodic MA + and I − arrangements at the (110) surface also restrict ion migrations compared to those of (200) planes. In addition, by comparing the optoelectronic properties of (200) planes of the pseudo-cubic and rhombic dodecahedral MAPbI 3 SCs, it is found that the roomtemperature-grown pseudo-cubic MAPbI 3 SC possesses lower intrinsic defect densities and thus enhances the photo response.
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