Mg(2)Si and Mg(2)Sn are indirect band gap semiconductors with two low-lying conduction bands (the lower mass and higher mass bands) that have their respective band edges reversed in the two compounds. Consequently, for some composition x, Mg(2)Si(1-x)Sn(x) solid solutions must display a convergence in energy of the two conduction bands. Since Mg(2)Si(1-x)Sn(x) solid solutions are among the most prospective of the novel thermoelectric materials, we aim on exploring the influence of such a band convergence (valley degeneracy) on the Seebeck coefficient and thermoelectric properties in a series of Mg(2)Si(1-x)Sn(x) solid solutions uniformly doped with Sb. Transport measurements carried out from 4 to 800 K reveal a progressively increasing Seebeck coefficient that peaks at x=0.7. At this concentration the thermoelectric figure of merit ZT reaches exceptionally large values of 1.3 near 700 K. Our first principles calculations confirm that at the Sn content x≈0.7 the two conduction bands coincide in energy. We explain the high Seebeck coefficient and ZT values as originating from an enhanced density-of-states effective mass brought about by the increased valley degeneracy as the two conduction bands cross over. We corroborate the increase in the density-of-states effective mass by measurements of the low temperature specific heat. The research suggests that striving to achieve band degeneracy by means of compositional variations is an effective strategy for enhancing the thermoelectric properties of these materials.

We report a melt spinning technique followed by a quick spark plasma sintering procedure to fabricate high-performance p-type Bi0.52Sb1.48Te3 bulk material with unique microstructures. The microstructures consist of nanocrystalline domains embedded in amorphous matrix and 5–15 nm nanocrystals with coherent grain boundary. The significantly reduced thermal conductivity leads to a state-of-the-art dimensionless figure of merit ZT∼1.56 at 300 K, more than 50% improvement of that of the commercial Bi2Te3 ingot materials.

The ability to control chemical and physical structuring at the nanometre scale is important for developing high-performance thermoelectric materials. Progress in this area has been achieved mainly by enhancing phonon scattering and consequently decreasing the thermal conductivity of the lattice through the design of either interface structures at nanometre or mesoscopic length scales or multiscale hierarchical architectures. A nanostructuring approach that enables electron transport as well as phonon transport to be manipulated could potentially lead to further enhancements in thermoelectric performance. Here we show that by embedding nanoparticles of a soft magnetic material in a thermoelectric matrix we achieve dual control of phonon- and electron-transport properties. The properties of the nanoparticles-in particular, their superparamagnetic behaviour (in which the nanoparticles can be magnetized similarly to a paramagnet under an external magnetic field)-lead to three kinds of thermoelectromagnetic effect: charge transfer from the magnetic inclusions to the matrix; multiple scattering of electrons by superparamagnetic fluctuations; and enhanced phonon scattering as a result of both the magnetic fluctuations and the nanostructures themselves. We show that together these effects can effectively manipulate electron and phonon transport at nanometre and mesoscopic length scales and thereby improve the thermoelectric performance of the resulting nanocomposites.

Herein, we report the synthesis of multiscale nanostructured p-type (Bi,Sb)(2)Te(3) bulk materials by melt-spinning single elements of Bi, Sb, and Te followed by a spark plasma sintering process. The samples that were most optimized with the resulting composition (Bi(0.48)Sb(1.52)Te(3)) and specific nanostructures showed an increase of approximately 50% or more in the figure of merit, ZT, over that of the commercial bulk material between 280 and 475 K, making it suitable for commercial applications related to both power generation and refrigeration. The results of high-resolution electron microscopy and small angle and inelastic neutron scattering along with corresponding thermoelectric property measurements corroborate that the 10-20 nm nanocrystalline domains with coherent boundaries are the key constituent that accounts for the resulting exceptionally low lattice thermal conductivity and significant improvement of ZT.

Intelligent photoresponsive isotropic semiconductor micromotors are developed by taking advantage of the limited penetration depth of light to induce asymmetrical surface chemical reactions. Independent of the Brownian motion of themselves, the as-proposed isotropic micromotors are able to continuously move with both motion direction and speed just controlled by light, as well as precisely manipulate particles for nanoengineering.