The IBM/TENN/TULANE/LLNL/LBL Beamline 8.0 at the advanced light source combining a 5.0 cm, 89 period undulator with a high-throughput, high-resolution spherical grating monochromator, provides a powerful excitation source over a spectral range of 70-1200 eV for surface physics and material science research. The beamline progress and the first experimental results obtained with a fluorescence end station on graphite and titanium oxides are presented here. The dispersive features in K emission spectra of graphite excited near threshold, and found a clear relationship between them and graphite band structure are observed. The monochromator is operated at a resolving power of roughly 2000, while the spectrometer has a resolving power of 400 for these fluorescence experiments. Q

A comprehensive study of the electronic structure of group-III nitrides ͑AlN, GaN, InN, and BN͒ crystallizing in the wurtzite, zinc-blende, and graphitelike hexagonal ͑BN͒ structures is presented. A large set of the x-ray emission and absorption spectra was collected at the several synchrotron radiation facilities at installations offering the highest possible energy resolution. By taking advantage of the linear polarization of the synchrotron radiation and making careful crystallographic orientation of the samples, the bonds along c axis () and ''in plane'' () in the wurtzite structure could be separately examined. Particularly for AlN we found pronounced anisotropy of the studied bonds. The experimental spectra are compared directly with ab initio calculations of the partial density of states projected on the cation and anion atomic sites. For the GaN, AlN, and InN the agreement between structures observed in the calculated density of states ͑DOS͒ and structures observed in the experimental spectra is very good. In the case of hexagonal BN we have found an important influence of insufficient core screening in the x-ray spectra that influences the DOS distribution. The ionicity of the considered nitrides is also discussed.

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The independent particle approximation is shown to break down for the photoionization of both inner and outer nᐉ ͑ᐉ . 0͒ electrons of all atoms, at high enough energy, owing to interchannel interactions with the nearby ns photoionization channels. The effect is illustrated for Ne 2p in the 1 keV photon energy range through a comparison of theory and experiment. The implications for x-ray photoelectron spectroscopy of molecules and condensed matter are discussed. [S0031-9007 (97)03382-6] PACS numbers: 32.80.Fb

A combination of x-ray emission spectroscopy and x-ray photoelectron spectroscopy using high brightness synchrotron radiation has been employed to investigate the electronic and chemical structure of the buried CdS/Cu(In, Ga)Se2 interface, which is the active interface in highly efficient thin film solar cells. In contrast to the conventional model of an abrupt interface, intermixing processes involving the elements S, Se, and In have been identified. The results shed light on the electronic structure and interface formation processes of semiconductor heterojunctions and demonstrate a powerful tool for investigating buried interfaces in general.