Ferromagnetic or antiferromagnetic spin ordering is governed by the exchange interaction, the strongest force in magnetism. Understanding spin dynamics in magnetic materials is an issue of crucial importance for progress in information processing and recording technology. Usually the dynamics are studied by observing the collective response of exchange-coupled spins, that is, spin resonances, after an external perturbation by a pulse of magnetic field, current or light. The periods of the corresponding resonances range from one nanosecond for ferromagnets down to one picosecond for antiferromagnets. However, virtually nothing is known about the behaviour of spins in a magnetic material after being excited on a timescale faster than that corresponding to the exchange interaction (10-100 fs), that is, in a non-adiabatic way. Here we use the element-specific technique X-ray magnetic circular dichroism to study spin reversal in GdFeCo that is optically excited on a timescale pertinent to the characteristic time of the exchange interaction between Gd and Fe spins. We unexpectedly find that the ultrafast spin reversal in this material, where spins are coupled antiferromagnetically, occurs by way of a transient ferromagnetic-like state. Following the optical excitation, the net magnetizations of the Gd and Fe sublattices rapidly collapse, switch their direction and rebuild their net magnetic moments at substantially different timescales; the net magnetic moment of the Gd sublattice is found to reverse within 1.5 picoseconds, which is substantially slower than the Fe reversal time of 300 femtoseconds. Consequently, a transient state characterized by a temporary parallel alignment of the net Gd and Fe moments emerges, despite their ground-state antiferromagnetic coupling. These surprising observations, supported by atomistic simulations, provide a concept for the possibility of manipulating magnetic order on the timescale of the exchange interaction.

Atomistic modelling of magnetic materials provides unprecedented detail about the underlying physical processes that govern their macroscopic properties, and allows the simulation of complex effects such as surface anisotropy, ultrafast laser-induced spin dynamics, exchange bias, and microstructural effects. Here we present the key methods used in atomistic spin models which are then applied to a range of magnetic problems. We detail the parallelization strategies used which enable the routine simulation of extended systems with full atomistic resolution.

The question of how, and how fast, magnetization can be reversed is a topic of great practical interest for the manipulation and storage of magnetic information. It is generally accepted that magnetization reversal should be driven by a stimulus represented by time-non-invariant vectors such as a magnetic field, spin-polarized electric current, or cross-product of two oscillating electric fields. However, until now it has been generally assumed that heating alone, not represented as a vector at all, cannot result in a deterministic reversal of magnetization, although it may assist this process. Here we show numerically and demonstrate experimentally a novel mechanism of deterministic magnetization reversal in a ferrimagnet driven by an ultrafast heating of the medium resulting from the absorption of a sub-picosecond laser pulse without the presence of a magnetic field.

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Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, and beyond-CMOS logic. We discuss state-of-the-art developments in these areas as well as opportunities and challenges that will have to be met, both at the device and system level, in order to integrate novel spintronic functionalities and materials in mainstream microelectronic platforms.Conventional information processing and communication devices work by controlling the flow of electric charges in integrated circuits. Such circuits are based on nonmagnetic semiconductors, in Technologies based on GMR and MTJ devices are now firmly established and compatible with CMOS fab processes. Yet, in order to meet the increasing demand for high-speed, high-density, and low power electronic components, the design of materials, processes, and spintronic circuits needs to be continuously innovated. Further, recent breakthroughs in basic research brought forward novel phenomena that allow for the generation and interconversion of charge, spin, heat, and optical signals.Many of these phenomena are based on non-equilibrium spin-orbit interaction effects, such as the spin Hall and Rashba-Edelstein effects 6,8,23 or their thermal 24 and optical 25,26 analogues. Spin-orbit torques (SOT), for example, can excite any type of magnetic materials, ranging from metals to semiconductors and insulators, in both ferromagnetic and antiferromagnetic configurations 6 . This versatility allows for the switching of single layer ferromagnets, ferrimagnets, and antiferromagnets, as well as for the excitation of spin waves and auto-oscillations in both planar and vertical device geometries 10,11 . Charge-spin conversion effects open novel pathways for information processing using Boolean logic, as well as promising avenues for implementing unconventional neuromorphic 27,28,29 and probabilistic 30 computing schemes. Finally, spintronic devices cover a broad bandwidth ranging from DC to THz 31,32 , leading to exciting opportunities for the on-chip generation and detection of high frequency signals.