The urgent requirement for energy-efficient electronic hardware in data-intensive computing tasks, to avoid the von Neumann bottleneck, is propelling the development of computer architectures like in-memory computing. But siliconbased devices are constrained by physical limitations. Carbon nanotubes (CNTs) with a superior electronic property and intrinsic immunity for the short-channel effect (SCE) are one of the most promising candidate materials for next-generation devices.Here, a dual-gate device with a TiN floating gate utilizing a CNT network as a channel material is fabricated and characterized. By modulating the conducting state in the CNT channel with the charge stored in the floating gate, we can control the device state on the top side flexibly. This means the information stored in the floating gate can be used as an input signal in the top-gate device for logic computing. The top-gate device's multifunctional logic features (shifting from AND to OR) are obtained by carefully selecting the work point. The combination of logic and memory properties in one device may be further used in in-memory computing and field-programmable gate arrays.

As the physical scaling limit of silicon-based integrated circuits is approached, new materials and device structures become necessary. The exclusive-OR (XOR) gate is a basic logic gate performed as a building block for digital adder and encrypted circuits. Here, we suggest that using the ambipolar property of carbon nanotubes and the threshold modulation ability of dual-gate field-effect transistors, an XOR gate can be constructed in only one transistor. For a traditional XOR gate, 4 to 6 transistors are needed, and this low-footprint topology could be employed in the future for hyperscaling and three-dimensional logic and memory transistor integration.