Hole transport materials (HTMs) assisted halide perovskite solar cells (PSCs) revealed excellent performance in photovoltaic technology within a short time period. Herein, a cost-effective hole transport materials (HTMs) namely BTBDT...

Multiferroic composites are promising candidates for magnetic field sensors, next-generation low power memory and spintronic devices, as they exhibit much higher magnetoelectric (ME) coupling and coupled ordering parameters compared to the single-phase multiferroics. Hence, the 3-0 type particulate multiferroic composites having general formula (1 − Φ)[PbFe0.5Nb0.5O3]-Φ[Co0.6Zn0.4Fe1.7Mn0.3O4] (Φ = 0.0, 0.05, 0.1, 0.2, 0.3, 0.4, 0.5, 1.0, (1 − Φ) PFN-ΦCZFMO) were prepared using a hybrid synthesis technique. Preliminary structural and microstructural analysis were carried out using XRD and FESEM techniques, which suggest the formation of 3-0 type particulate composite without the presence of any impurity phases. The multiferroic behaviour of the composites is studied with polarization versus electric field (P-E) and magnetization versus magnetic field (M-H) characteristics at room temperature. The nature of ME coupling was investigated elaborately by employing the Landau free energy equation along with the magneto-capacitance measurement. This investigation suggests the existence of biquadratic nature of ME coupling (P2M2). The magneto-electric coupling measurement also suggests that strain mediated domain coupling between the ferroelectric and magnetic ordering is responsible for the magneto-electric behaviour. The obtained value of direct ME coefficient 26.78 mV/cm-Oe for Φ = 0.3, found to be higher than the well-known single-phase materials and polycrystalline composites.

No abstract

Rapidly developing electronics industry is striving for higher energy-storage capability dielectric capacitors for pulsed power electronic devices. Both high dielectric permittivity and high dielectric breakdown strength are essential properties to meet the desired device performance. However, due to materials limitations and their preparation requirements, there are significant challenges which limit the use of current dielectrics in high-energy storage capacitors. In addition material limitations such as, low dielectric permittivity, low breakdown strength, and high hysteresis loss decrease these materials' energy density and efficiency, restricting potential applications. Thus, a thorough understanding of the implementation, optimization and limitations of ferroelectric, relaxor-ferroelectric, and anti-ferroelectric thin films in high-energy storage dielectric capacitors is an essential and important research topic for the incorporation of these materials in near future applications.