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Nitrogen ions ( N2 +) with 62 keV have been implanted into 100-nm-thick Ti films evaporated on thermally cleaned NaCl substrates. Unimplanted and N-implanted Ti films have been examined by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. The analysis has provided evidence that N-implantation results in the epitaxial formation of NaCl-type TiN y and simultaneously induces the release of H from evaporated-Ti films containing TiH x . The nitriding of evaporated-Ti films is mainly divided into two elemental processes. One is accompanied by the hcp-fcc transformation and the other is not. The formation mechanism for TiN y is discussed.

Highly nitrogenated amorphous carbon films have been prepared by reactive rf-magnetron sputtering using pure N2 or Ar/N2 mixed gases. The nitrogen content measured by Rutherford backscattering spectrometry was 40 at% for pure N2 gas and 35 at% for Ar75%-N225% mixed gas. Oxygen atoms of about 7 at% were also detected. Infrared spectra showed a broad absorption band in the range from 1200 to 1600 cm-1 assigned to the N atoms incorporated in the bonding network of amorphous carbon. They showed an absorption band near 2200 cm-1 assigned to the C≡N or N=C=O bond, but no trace of the N-H or C-H bond was seen.