Multiferroic materials have attracted much interest due to the unusual coexistence of ferroelectric and (anti-)ferromagnetic ground states in a single compound. They offer an exciting platform for new physics and potentially novel devices. BiFeO3 is one of the most celebrated multiferroic materials and has highly desirable properties. It is the only known room-temperature multiferroic with TC ≈ 1100 K and TN ≈ 650 K, and exhibits one of the largest spontaneous electric polarisations, P ≈ 80 µC cm(-2). At the same time, it has a magnetic cycloid structure with an extremely long period of 620 Å, which arises from competition between the usual symmetric exchange interaction and the antisymmetric Dzyaloshinskii-Moriya (DM) interaction. There is also an intriguing interplay between the DM interaction and single ion anisotropy K. In this review, we have attempted to paint a complete picture of bulk BiFeO3 by summarising the structural and dynamic properties of both the spin and lattice parts and their magneto-electric coupling.

Perovskite PbCoO synthesized at 12 GPa was found to have an unusual charge distribution of PbPbCoCoO with charge orderings in both the A and B sites of perovskite ABO. Comprehensive studies using density functional theory (DFT) calculation, electron diffraction (ED), synchrotron X-ray diffraction (SXRD), neutron powder diffraction (NPD), hard X-ray photoemission spectroscopy (HAXPES), soft X-ray absorption spectroscopy (XAS), and measurements of specific heat as well as magnetic and electrical properties provide evidence of lead ion and cobalt ion charge ordering leading to PbPbCoCoO quadruple perovskite structure. It is shown that the average valence distribution of PbCoO between PbCrO and PbNiO can be stabilized by tuning the energy levels of Pb 6s and transition metal 3d orbitals.

Chemical doping is one of the most important strategies for tuning electrical properties of semiconductors, particularly thermoelectric materials. Generally, the main role of chemical doping lies in optimizing the carrier concentration, but there can potentially be other important effects. Here, we show that chemical doping plays multiple roles for both electron and phonon transport properties in half-Heusler thermoelectric materials. With ZrNiSn-based half-Heusler materials as an example, we use high-quality single and polycrystalline crystals, various probes, including electrical transport measurements, inelastic neutron scattering measurement, and first-principles calculations, to investigate the underlying electron-phonon interaction. We find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering, but has negligible influence on lattice thermal conductivity. Furthermore, it is possible to establish a carrier scattering phase diagram, which can be used to select reasonable strategies for optimization of the thermoelectric performance.

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