No abstract

RNA viruses in aquatic environments remain poorly studied. Here, we analysed the RNA virome from approximately 10 l water from Yangshan Deep-Water Harbour near the Yangtze River estuary in China and identified more than 4,500 distinct RNA viruses, doubling the previously known set of viruses. Phylogenomic analysis identified several major lineages, roughly, at the taxonomic ranks of class, order and family. The 719-member-strong Yangshan virus assemblage is the sister clade to the expansive class Alsuviricetes and consists of viruses with simple genomes that typically encode only RNA-dependent RNA polymerase (RdRP), capping enzyme and capsid protein. Several clades within the Yangshan assemblage independently evolved domain permutation in the RdRP. Another previously unknown clade shares ancestry with Potyviridae, the largest known plant virus family. The ‘Aquatic picorna-like viruses/Marnaviridae’ clade was greatly expanded, with more than 800 added viruses. Several RdRP-linked protein domains not previously detected in any RNA viruses were identified, such as the small ubiquitin-like modifier (SUMO) domain, phospholipase A2 and PrsW-family protease domain. Multiple viruses utilize alternative genetic codes implying protist (especially ciliate) hosts. The results reveal a vast RNA virome that includes many previously unknown groups. However, phylogenetic analysis of the RdRPs supports the previously established five-branch structure of the RNA virus evolutionary tree, with no additional phyla.

The discovery of magnetism in 2D materials offers new opportunities for exploring novel quantum states and developing spintronic devices. In this work, using field‐effect transistors with solid ion conductors as the gate dielectric (SIC‐FETs), we have observed a significant enhancement of ferromagnetism associated with magnetic easy‐axis switching in few‐layered Cr2Ge2Te6. The easy axis of the magnetization, inferred from the anisotropic magnetoresistance, can be uniformly tuned from the out‐of‐plane direction to an in‐plane direction by electric field in the few‐layered Cr2Ge2Te6. Additionally, the Curie temperature, obtained from both the Hall resistance and magnetoresistance measurements, increases from 65 to 180 K in the few‐layered sample by electric gating. Moreover, the surface of the sample is fully exposed in the SIC‐FET device configuration, making further heterostructure‐engineering possible. This work offers an excellent platform for realizing electrically controlled quantum phenomena in a single device.