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Although the power conversion efficiency of perovskite solar cells has increased from 3.81% to 22.1% in just 7 years, they still suffer from stability issues, as they degrade upon exposure to moisture, UV light, heat, and bias voltage. We herein examined the degradation of perovskite solar cells in the presence of UV light alone. The cells were exposed to 365 nm UV light for over 1,000 h under inert gas at <0.5 ppm humidity without encapsulation. 1-sun illumination after UV degradation resulted in recovery of the fill factor and power conversion efficiency. Furthermore, during exposure to consecutive UV light, the diminished short circuit current density (Jsc) and EQE continuously restored. 1-sun light soaking induced recovery is considered to be caused by resolving of stacked charges and defect state neutralization. The Jsc and EQE bounce-back phenomenon is attributed to the beneficial effects of PbI2 which is generated by the decomposition of perovskite material.

Here, we demonstrate high-performance p-type thin film transistors (TFTs) with a SnO channel layer grown by atomic layer deposition (ALD).

To understand electrical/dielectric phenomena and the origins of bistable resistive switching, impedance spectroscopy was applied to NiO thin films prepared through atomic layer deposition. The dc current-voltage characteristics of the NiO thin films were also determined. Frequency-dependent characterizations indicated that the switching and memory phenomena in NiO thin films did not originate from the non-Ohmic effect at the electrode/NiO interfaces but from the bulk-related responses, i.e., from an electrocomposite where highly conducting components are distributed in the insulating NiO matrix. Low dielectric constants and bias-independent capacitance appeared to corroborate the bulk-based responses in resistive switching in NiO thin films.

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