The strong coupling between antiferromagnetism and ferroelectricity at room temperature found in BiFeO3 generates high expectations for the design and development of technological devices with novel functionalities. However, the multi-domain nature of the material tends to nullify the properties of interest and complicates the thorough understanding of the mechanisms that are responsible for those properties. Here we report the realization of a BiFeO3 material in thin film form with single-domain behaviour in both its magnetism and ferroelectricity: the entire film shows its antiferromagnetic axis aligned along the crystallographic b axis and its ferroelectric polarization along the c axis. With this we are able to reveal that the canted ferromagnetic moment due to the Dzyaloshinskii–Moriya interaction is parallel to the a axis. Furthermore, by fabricating a Co/BiFeO3 heterostructure, we demonstrate that the ferromagnetic moment of the Co film does couple directly to the canted moment of BiFeO3.

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Abstract:Organic molecules with a permanent electric dipole moment have been widely

SmFeO3 has attracted considerable attention very recently due to its reported multiferroic properties above room temperature. We have performed powder and single crystal neutron diffraction as well as complementary polarization dependent soft X-ray absorption spectroscopy measurements on floating-zone grown SmFeO3 single crystals in order to determine its magnetic structure. We found a k=0 G-type collinear antiferromagnetic structure that is not compatible with inverse Dzyaloshinskii-Moriya interaction driven ferroelectricity. While the structural data reveal a clear sign for magneto-elastic coupling at the Néel-temperature of ∼675  K, the dielectric measurements remain silent as far as ferroelectricity is concerned.

The origins of barrier lowering leading to high efficient organic light emitting devices with incorporation of molybdenum oxide (MoOx) in anode structures are investigated. Ultraviolet and x-ray photoemission spectra reveal that p-type doping effects in the organic films and carrier concentration increase at the anode interfaces cause the hole injection barrier lowering. The gap states, which help carrier injection from the anodes, resulted from the oxygen deficiency in MoOx due to the interaction of organic materials and MoOx.