No abstract

Time resolved studies of germylene, GeH 2 , generated by laser flash photolysis of 3,4dimethylgermacyclopentene-3, have been carried out to obtain rate constants for its bimolecular reaction with acetylene, C 2 H 2 . The reaction was studied in the gas-phase over the pressure range 1-100 Torr, with SF 6 as bath gas, at 5 temperatures in the range 297-553 K. The reaction showed a very slight pressure dependence at higher temperatures. The high pressure rate constants (obtained by extrapolation at the three higher temperatures) gave the Arrhenius equation:These Arrhenius parameters are consistent with a fast reaction occurring at approximately 30% of the collision rate at 298 K. Quantum chemical calculations (both DFT and ab initio G2//B3LYP and G2//QCISD) of the GeC 2 H 4 potential energy surface (PES), show that GeH 2 þ C 2 H 2 react initially to form germirene which can isomerise to vinylgermylene with a relatively low barrier. RRKM modelling, based on a loose association transition state, but assuming vinylgermylene is the end product (used in combination with a weak collisional deactivation model) predicts a strong pressure dependence using the calculated energies, in conflict with the experimental evidence. The detailed GeC 2 H 4 PES shows considerable complexity with ten other accessible stable minima (B3LYP level), the three most stable of which are all germylenes. Routes through this complex surface were examined in detail. The only product combination which appears capable of satisfying the observed lack of a strong pressure dependence is Ge( 3 P) þ C 2 H 4 . C 2 H 4 was confirmed as a product by GC analysis. Although the formation of these products are shown to be possible by singlet-triplet curve crossing during dissociation of 1-germiranylidene (1-germacyclopropylidene), it seems more likely (on thermochemical grounds) that the triplet biradical, GeCH 2 CH 2 , is the immediate product precursor. Comparisons are made with the reaction of SiH 2 with C 2 H 2 .

Time-resolved studies of germylene, GeH(2), and dimethygermylene, GeMe(2), generated by the 193 nm laser flash photolysis of appropriate precursor molecules have been carried out to try to obtain rate coefficients for their bimolecular reactions with dimethylgermane, Me(2)GeH(2), in the gas-phase. GeH(2) + Me(2)GeH(2) was studied over the pressure range 1-100 Torr with SF(6) as bath gas and at five temperatures in the range 296-553 K. Only slight pressure dependences were found (at 386, 447 and 553 K). RRKM modelling was carried out to fit these pressure dependences. The high pressure rate coefficients gave the Arrhenius parameters: log(A/cm(3) molecule(-1) s(-1)) = -10.99 +/- 0.07 and E(a) =-(7.35 +/- 0.48) kJ mol(-1). No reaction could be found between GeMe(2) + Me(2)GeH(2) at any temperature up to 549 K, and upper limits of ca. 10(-14) cm(3) molecule(-1) s(-1) were set for the rate coefficients. A rate coefficient of (1.33 +/- 0.04) x 10(-10) cm(3) molecule(-1) s(-1) was also obtained for GeH(2) + MeGeH(3) at 296 K. No reaction was found between GeMe(2) and MeGeH(3). Rate coefficient comparisons showed, inter alia, that in the substrate germane Me-for-H substitution increased the magnitudes of rate coefficients significantly, while in the germylene Me-for-H substitution decreased the magnitudes of rate coefficients by at least four orders of magnitude. Quantum chemical calculations (G2(MP2,SVP)//B3LYP level) supported these findings and showed that the lack of reactivity of GeMe(2) is caused by a positive energy barrier for rearrangement of the initially formed complexes. Full details of the structures of intermediate complexes and the discussion of their stabilities are given in the paper.

The first representative of highly delocalized triplet carbenes bearing both vinyl and ethynyl groups at the formal carbene center, 5-methylhexa-1,2,4-triene-1,3-diyl, has been generated in a low-temperature Ar matrix upon UV photolysis of 5-ethynyl-3,3-dimethyl-3H-pyrazole and detected by FTIR spectroscopy. The transformation of 3H-pyrazole into the carbene proceeds in two stages via intermediate 3-diazo-5-methylhex-4-en-1-yne. According to DFT PBE/TZ2P calculations, 5-methylhexa-1,2,4-triene-1,3-diyl possesses an effective conjugation along the five-carbon chain and shows the same type of the bond length alternation as the HC(4m+1)H-type polyacetylenic carbenes. The carbene readily reacts with molecular oxygen, producing carbonyl oxides, which undergo further transformations typical of this type of compound upon irradiation in the UV-visible region. Two major photolytic rearrangements of 5-methylhexa-1,2,4-triene-1,3-diyl represent reactions characteristic of vinyl carbenes and resulting in the formation of 1-ethynyl-3,3-dimethylcyclopropene and 3E-2-methylhexa-1,3-dien-5-yne. A minor reaction is that typical of ethynylcarbenes; this leads to the formation of singlet 2-(2-methylpropenyl)cyclopropenylidene. Fragments of singlet and triplet potential energy surfaces of the C(7)H(8) system have been explored in DFT PBE/TZ2P calculations.

Time-resolved studies of silylene, SiH2, and dimethylsilylene, SiMe2, generated by the 193 nm laser flash photolysis of appropriate precursor molecules have been carried out to obtain rate constants for their bimolecular reactions with dimethylgermane, Me2GeH2, in the gas phase. SiMe2 + Me2GeH2 was studied at five temperatures in the range 299-555 K. Problems of substrate UV absorption at 193 nm at temperatures above 400 K meant that only three temperatures could be used reliably for rate constant measurement. These rate constants gave the Arrhenius parameters log(A/cm3 molecule(-1) s(-1)) = -13.25 +/- 0.16 and E(a) = -(5.01 +/- 1.01) kJ mol(-1). Only room temperature studies of SiH2 were carried out. These gave values of (4.05 +/- 0.06) x 10(-10) cm3 molecule(-1) s(-1) (SiH2 + Me2GeH2 at 295 K) and also (4.41 +/- 0.07) x 10(-10) cm3 molecule(-1) s(-1) (SiH2 + MeGeH3 at 296 K). Rate constant comparisons show the surprising result that SiMe2 reacts 12.5 times slower with Me2GeH2 than with Me2SiH2. Quantum chemical calculations (G2(MP2,SVP)//B3LYP level) of the model Si-H and Ge-H insertion processes of SiMe2 with SiH4/MeSiH3 and GeH4/MeGeH3 support these findings and show that the lower reactivity of SiMe2 with Ge-H bonds is caused by a higher secondary barrier for rearrangement of the initially formed complexes. Full details of the structures of intermediate complexes and the discussion of their stabilities are given in the paper. Other, related, comparisons of silylene reactivity are also presented.