Resistive switching (RS) is studied in a memristor based on a ZrO 2 (Y)/Ta 2 O 5 stack under a white Gaussian noise voltage signal. We have found that the memristor switches between the low resistance state and the high resistance state in a random telegraphic signal (RTS) mode. The eective potential profile of the memristor shows from two to three local minima and depends on the input noise parameters and the memristor operation. These observations indicate the multiplicative character of the noise on the dynamical behavior of the memristor, that is the noise perceived by the memristor depends on the state of the system and its electrical properties are influenced by the noise signal. The detected eects manifest the fundamental intrinsic properties of the memristor as a multistable nonlinear system.

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Cr 2+ :ZnSe polycrystalline active elements in the form of disks with one and two inner doped layers were fabricated by using solid-state diffusion bonding (SSDB) with subsequent hot isostatic pressing. A comparison of the generation properties of active elements with the same absorption and various profiles of internal doping was made using a scheme with a semiconfocal cavity and CW thulium fiber laser pumping. All test samples showed high thermal and optical resistance at a pump power density of up to 50 kW cm −2 in room-temperature experiments that indicates the promise of using SSDB technology in high-power mid-IR lasers. The samples with two layers of internal doping demonstrated 30% higher lasing slope efficiency, than samples with one doped layer. This difference is explained by more uniform heating of the active element which was caused by increasing the volume of the sample involved in the absorption of pumping radiation.