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Single-electron devices operating at room temperature require sub-5 nm quantum dots having tunnel junctions of comparable dimensions. Further development in nanoelectronics depends on the capability to generate mesoscopic structures and interfacing these with complementary metal–oxide–semiconductor devices in a single system. The authors employ a combination of two novel methods of fabricating room temperature silicon single-electron transistors (SETs), Fowler–Nordheim scanning probe lithography (F-N SPL) with active cantilevers and cryogenic reactive ion etching followed by pattern-dependent oxidation. The F-N SPL employs a low energy electron exposure of 5–10 nm thick high-resolution molecular resist (Calixarene) resulting in single nanodigit lithographic performance [Rangelow et al., Proc. SPIE 7637, 76370V (2010)]. The followed step of pattern transfer into silicon becomes very challenging because of the extremely low resist thickness, which limits the etching depth. The authors developed a computer simulation code to simulate the reactive ion etching at cryogenic temperatures (−120 °C). In this article, the authors present the alliance of all these technologies used for the manufacturing of SETs capable to operate at room temperatures.

Articles you may be interested inMechanical properties of polymeric nanostructures fabricated through directed self-assembly of symmetric diblock and triblock copolymers J. Vac. Sci. Technol. B 30, 06F204 (2012); 10.1116/1.4766916 Development, analysis and control of a high-speed laser-free atomic force microscope Rev. Sci. Instrum. 81, 023707 (2010);Scanning probes have enabled modern nanoscience and are still the backbone of today's nanotechnology. Within the technological development of AFM systems, the cantilever evolved from a simple passive deflection element to a complex microelectromechanical system through integration of functional groups, such as piezoresistive detection sensors and bimaterial based actuators. Herein, the authors show actual trends and developments of miniaturization efforts of both types of cantilevers, passive and active. The results go toward the reduction of dimensions. For example, the authors have fabricated passive cantilever with a width of 4 lm, a length of 6 lm and thickness of 50-100 nm, showing one order of magnitude lower noise levels. By using active cantilevers, direct patterning on calixarene is demonstrated employing a direct, development-less phenomena triggered by tip emitted low energy (<50 eV) electrons. The scanning probes are not only applied for lithography, but also for imaging and probing of the surface before and immediately after scanning probe patterning. In summary, piezoresistive probes are comparable to passive probes using optical read-out. They are able to routinely obtain atomic step resolution at a low thermal noise floor. The active cantilever technology offers a compact, integrated system suited for integration into a table-top scanning probe nanolithography tool.

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