Ga2O3-based solar blind avalanche photodetectors exhibit low voltage operation, optical filter-free and monolithic integration of photodetector arrays, and therefore they are promising to be an alternative to the bulky and fragile photomultiplier tubes for weak signal detection in deep-ultraviolet region. Here, by deliberate lattice and band engineering, we construct an n-Barrier-n unipolar barrier avalanche photodetector consisting of β-Ga2O3/MgO/Nb:SrTiO3 heterostructure, in which the enlarged conduction band offsets fortify the reverse breakdown and suppress the dark current while the negligible valance band offsets faciliate minority carrier flow across the heterojunction. The developed devices exhibit record-high avalanche gain up to 5.9 × 105 and detectivity of 2.33 × 1016 Jones among the reported wafer-scale grown Ga2O3-based photodetectors, which are even comparable to the commercial photomultiplier tubes. These findings provide insights into precise manipulation of band alignment in avalanche photodetectors, and also offer exciting opportunities for further developing high-performance Ga2O3-based electronics and optoelectronics.

Solar blind photodetectors with a cutoff wavelength within the 200–280 nm region is attracting much attention due to their potential civilian and military applications. The avalanche photodetectors (APDs) formed based on wide-bandgap semiconductor Ga2O3 are expected to meet emerging technological demands. These devices, however, suffer from limitations associated with the quality of as-grown Ga2O3 or the difficulty in alleviating the defects and dislocations. Herein, high-performance APDs incorporating amorphous Ga2O3 (a-Ga2O3)/ITO heterojunction as the central element have been reliably fabricated at room temperature. The a-Ga2O3-based APDs exhibits an ultrahigh responsivity of 5.9 × 104 A/W, specific detectivity of 1.8 × 1014 Jones, and an external quantum efficiency up to 2.9 × 107% under 254 nm light irradiation at 40 V reverse bias. Notably, the gain could reach 6.8 × 104, indicating the outstanding capability for ultraweak signals detection. The comprehensive superior capabilities of the a-Ga2O3-based APDs can be ascribed to the intrinsic carrier transport manners in a-Ga2O3 as well as the modified band alignment at the heterojunctions. The trade-off between low processing temperature and superior characteristics of a-Ga2O3 promises greater design freedom for realization of wide applications of emerging semiconductor Ga2O3 with even better performance since relieving the burden on the integration progress.

Novel p-i-n self-powered solar-blind UV photodetector based on p-type spiro-MeOTAD (spiro), Ga2O3, and n-type Si is fabricated. The p-type spiro film is spin-coated on the surface of Ga2O3 film deposited...

Penicillin G acylase (PGA) was immobilized on magnetic Fe3O4@chitosan nanoparticles through the Schiff base reaction. The immobilization conditions were optimized as follows: enzyme/support 8.8 mg/g, pH 6.0, time 40 min, and temperature 25°C. Under these conditions, a high immobilization efficiency of 75% and a protein loading of 6.2 mg/g-support were obtained. Broader working pH and higher thermostability were achieved by the immobilization. In addition, the immobilized PGA retained 75% initial activity after ten cycles. Kinetic parameters Vmax and Km of the free and immobilized PGAs were determined as 0.91 mmol/min and 0.53 mmol/min, and 0.68 mM and 1.19 mM, respectively. Synthesis of amoxicillin with the immobilized PGA was carried out in 40% ethylene glycol at 25°C and a conversion of 72% was obtained. These results showed that the immobilization of PGA onto magnetic chitosan nanoparticles is an efficient and simple way for preparation of stable PGA.

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