The deterministic rotation of magnetization by electric fields is a challenging issue for future low-power spintronics. In a Co/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 multiferroic heterostructure, piezostrain-mediated, macroscopically maneuverable, and non-volatile magnetization reversal without an applied magnetic field is demonstrated. This, combined with the presented phase-field simulations, is of practical relevance for designing prototype devices.

A spin cluster glass behavior and a complicated exchange bias effect are observed in high quality BiFeO(3) nanocrystals grown by a hydrothermal method. The dynamic properties of the spin clusters investigated by measuring the frequency dependences of ac susceptibility show that the relaxation process can be described using a power law with the glass transition temperature T(g) = 57 K, relaxation time constant τ(0) = 4.4 × 10(-10) s, and critical exponent zv = 10.3 ± 1.9, consistent with a three-dimensional Ising spin glass. The exchange bias field (H(EB)) varies non-monotonically with temperature and achieves a minimum at T(g). The abnormal shift of hysteresis loops above T(g) may be interpreted in terms of a Malozemoff's random-field model with a framework of antiferromagnetic core/spin-cluster shell structure and a two-dimensional diluted antiferromagnet in a field (2D-DAFF) model, respectively. The exchange anisotropy of the BiFeO(3) nanocrystals will shed light on a possible application for magnetism related nanosized devices.

A large anisotropic remnant magnetization tunability was observed in multiferroic (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 (LSMO/PMN-0.3PT) epitaxial heterostructures. The remnant magnetization along [100] direction was suppressed by an electric field applied to the substrate while the remnant magnetization along [011¯] was enhanced. The tunabilities of the remnant magnetization along the [100] and [011¯] directions are about −17.9% and +157% under electric field of +7.27 kV/cm, respectively. This large anisotropic remnant magnetization tunability may find potential applications in the electrically written and magnetically read memories.