Cesium lead halide nanocrystals (CsPbX3 NCs) are new inorganic light sources covering the entire visible spectral range and exhibiting near-unity efficiencies. While the last years have seen rapid progress in green and red electroluminescence from CsPbX3 NCs, the development of blue counterparts remained rather stagnant. Controlling the surface state of CsPbX3 NCs had proven to be a major factor governing the efficiency of the charge injection and for diminishing the density of traps. Although didodecyldimethylammonium halides (DDAX; X = Br, Cl) had been known to improve the luminescence of CsPbX3 NCs when applied postsynthetically, they had not been used as the sole long-chain ammonium ligand directly in the synthesis of these NCs. Herein we report a facile, direct synthesis of DDAX-stabilized CsPbX3 NCs. We then demonstrate blue and green light-emitting diodes, characterized by the electroluminescence at 463–515 nm and external quantum efficiencies of 9.80% for green, 4.96% for sky-blue, and 1.03% for deep-blue spectral regions.

Many in-memory computing frameworks demand electronic devices with specific switching characteristics to achieve the desired level of computational complexity. Existing memristive devices cannot be reconfigured to meet the diverse volatile and non-volatile switching requirements, and hence rely on tailored material designs specific to the targeted application, limiting their universality. “Reconfigurable memristors” that combine both ionic diffusive and drift mechanisms could address these limitations, but they remain elusive. Here we present a reconfigurable halide perovskite nanocrystal memristor that achieves on-demand switching between diffusive/volatile and drift/non-volatile modes by controllable electrochemical reactions. Judicious selection of the perovskite nanocrystals and organic capping ligands enable state-of-the-art endurance performances in both modes – volatile (2 × 106 cycles) and non-volatile (5.6 × 103 cycles). We demonstrate the relevance of such proof-of-concept perovskite devices on a benchmark reservoir network with volatile recurrent and non-volatile readout layers based on 19,900 measurements across 25 dynamically-configured devices.

Since the inception of the unprecedented rise of halide perovskites for photovoltaic research, ion migration has shadowed this material class with undesirable hysteresis and degradation effects, limiting its practical implementations. Unfortunately, the localized doping and electrochemical reactions triggered by ion migration cause many more undesirable effects that are often unreported or misinterpreted because they deviate from classical semiconductor behavior. In this Perspective, we provide a concise overview of such effects in halide perovskites, such as operational instability in photovoltaics, polarization-induced abnormal external quantum efficiency in light-emitting diodes, and energy channel shift and anomalous sensitivities in hard radiation detection. Finally, we highlight a unique use case of exploiting ion migration as a boon to design emerging memory technologies such as memristors for information storage and computing.