Two new low-bandgap, conjugated donor (D)−acceptor (A) copolymers of porphyrin with 2,3-bis(4-trifluoromethylphenyl)pyrido[3,4-b]pyrazine (P1) and perylene diimide (P2) were synthesized by Sonogashira coupling polymerization and compared with porphyrin−dithienothiophene D−D copolymer (P3). All these polymers possess good thermal stability with decomposition temperatures over 300 °C. Polymers P1 and P2 in films exhibit strong absorption in near-IR (820−950 nm) with optical bandgaps as low as 1.15 eV; their Q-bands red shift 60−190 nm compared to that of P3, while the Soret bands are similar. The HOMO (−5.3 to −5.4 eV) and LUMO (−3.6 to −4.0 eV) of the D−A polymers are lower than that of the D−D polymer. Two-photon absorption (2PA) properties of the polymers were investigated by the femtosecond Z-scan method. The D−A polymer P2 exhibits 2PA cross sections over 7000 GM/repeat unit at telecommunication wavelengths (1320 and 1520 nm), larger than that of P1 and P3, due to the very strong, rigid, and coplanar perylene diimide acceptor and strong D−A intramolecular charge transfer.

More than 80% of biological learning information is received through the visual system; therefore, artificial vision systems have garnered continual interest in the field of artificial intelligence technologies. Simulating the activities of a range of human vision systems, such as discrimination, memory, and induced muscular activity, which still remains a challenge. The authors develop a high-speed multifunctional artificial vision system capable of recognizing, memorizing, and actuating self-protection by combining a Sb 2 Se 3 /CdS-core/shell (SC) nanorod array optoelectronic memristor, a threshold-switching memristor, and an electrochemical actuator. When an optoelectronic memristor is activated, it can cause an electrochemical actuator to move, simulating the eye muscle contraction and reproducing the self-protection response of closing eyes when the human eyes are injured by intense light. Light absorption and charge carrier extraction are advantages of optoelectronic memristors with high-quality SC nanorod arrays. The device achieves a fast response speed and a large response current of up to 40 µs and 0.8 µA. Artificial vision systems offer a potential technique for bionanotechnology, particularly in the domain of artificial intelligence simulation of biosensor systems.

With the exploration of ferroelectric materials, researchers have a strong desire to explore the next generation of non‐volatile ferroelectric memory with silicon‐based epitaxy, high‐density storage, and algebraic operations. Herein, a silicon‐based memristor with an epitaxial vertically aligned nanostructures BaTiO3–CeO2 film based on La0.67Sr0.33MnO3/SrTiO3/Si substrate is reported. The ferroelectric polarization reversal is optimized through the continuous exploring of growth temperature, and the epitaxial structure is obtained, thus it improves the resistance characteristic, the multi‐value storage function of five states is achieved, and the robust endurance characteristic can reach 109 cycles. In the synapse plasticity modulated by pulse voltage process, the function of the spiking‐time‐dependent plasticity and paired‐pulse facilitation is simulated successfully. More importantly, the algebraic operations of addition, subtraction, multiplication, and division are realized by using fast speed pulse of the width ≈50 ns. Subsequently, a convolutional neural network is constructed for identifying the CIFAR‐10 dataset, to simulate the performance of the device; the online and offline learning recognition rate reach 90.03% and 92.55%, respectively. Overall, this study paves the way for memristors with silicon‐based epitaxial ferroelectric films to realize multi‐value storage, algebraic operations, and neural computing chip applications.