Metal halide perovskites have emerged as promising photovoltaic materials, but, despite ultralow thermal conductivity, progress on developing them for thermoelectrics has been limited. Here, we report the thermoelectric properties of all-inorganic tin based perovskites with enhanced air stability. Fine tuning the thermoelectric properties of the films is achieved by self-doping through the oxidation of tin (ΙΙ) to tin (ΙV) in a thin surface-layer that transfers charge to the bulk. This separates the doping defects from the transport region, enabling enhanced electrical conductivity. We show that this arises due to a chlorine-rich surface layer that acts simultaneously as the source of free charges and a sacrificial layer protecting the bulk from oxidation. Moreover, we achieve a figure-of-merit (ZT) of 0.14 ± 0.01 when chlorine-doping and degree of the oxidation are optimised in tandem.

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Circularly polarized light (CPL) has considerable technological potential, from quantum computing to bioimaging. To maximize the opportunity, high performance photodetectors that can directly distinguish left-handed and right-handed circularly polarized light are needed. Hybrid organic–inorganic perovskites containing chiral organic ligands are an emerging candidate for the active material in CPL photodetecting devices, but current studies suggest there to be a trade-off between the ability to differentially absorb CPL and photocurrent responsivity in chiral perovskites devices. Here, we report a CPL detector based on quasi two-dimensional (quasi-2D) chiral perovskite films. We find it is possible to generate materials where the circular dichroism (CD) is comparable in both 2D and quasi-2D films, while the responsivity of the photodetector improves for the latter. Given this, we are able to showcase a CPL photodetector that exhibits both a high dissymmetry factor of 0.15 and a high responsivity of 15.7 A W –1 . We believe our data further advocates the potential of chiral perovskites in CPL-dependent photonic technologies.

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There are only a few reported methods by which the size and morphology of organic single crystals for high-performance organic field-effect transistors (OFETs) or other devices can be controlled. Here, a facile solution-processed antisolvent vapor diffusion method was employed to grow millimeter-length C60 single crystal microwires directly in solution. The size of the microwires can be controllably varied via the C60 concentration and/or the choice of antisolvent. OFETs fabricated from the as-produced microwires exhibit mobilities as high as 2.30 cm2 V-1 s-1. A clear relationship between the crystal preparation conditions and device performance is revealed whereby it is observed that the lower the evaporation rate of antisolvent and/or the higher the C60 concentration, the higher the device performance. Photodetectors based on our microwires give a responsivity that is an order of magnitude higher than those grown by drop-casting methods. This study provides a facile method for the crystal engineering of size-tunable millimeter-length C60 single crystals, and revealed the important influences of the antisolvent on the C60 crystal size and the performance of devices based on them. We believe that our processing approach can be further exploited for a broad range of other organic semiconductors to achieve desirable single crystal size and morphology and thus obtain desirable OFETs and photodetector performance.