RF‐plasma treatment of ion‐implanted Al–SiO2Si structures is shown to decrease the defect concentration considerably and to activate the doping impurity. When the face side of the wafer is treated defect annealing processes are increased considerably. Thermal desorption method shows that RF plasma treatment increases the hydrogen concentration in the semiconductor wafer. Hydrogen can be introduced into the wafer from the SiO2 layer as well as from gas discharge ambient. ESR demonstrates semiconductor crystalline structure ordering during RF‐plasma annealing. A mechanism of vacancy defect annealing is proposed which takes into account deep level recharging and the role of atomic hydrogen.
Articles you may be interested inMechanisms of positive charge generation in buried oxide of UNIBOND and separation by implanted oxygen silicon-on-insulator structures during high-field electron injection
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.