A topological insulator (TI) is an exotic material that has a bulk insulating gap and metallic surface states with unique spin-momentum locking characteristics. Despite its various important applications, large scale integration of TI into MOSFET technologies and its coherent transport study are still rarely explored. Here, we report the growth of high quality Bi2Se3 thin film on amorphous SiO2/Si substrate using MBE. By controlling the thickness of the film at ∼7 nm and capping the as grown film in situ with a 2 nm-thick Se layer, largest electrostatic field effect is obtained and the resistance is changed by almost 300%. More importantly, pronounced gate-tunable weak antilocalization (WAL) is observed, which refers to modulation of α from ∼−0.55 to ∼−0.2 by applying a back gate voltage. The analysis herein suggests that the significant gate-tunable WAL is attributable to the transition from weak disorder into intermediate disorder regime when the Fermi level is shifted downward by increasing the negative back gate voltage. Our findings may pave the ways towards the development of TI-based MOSFET and are promising for the applications of electric-field controlled spintronic and magnetic device.

We present the results of experiments on the optical, electrical and magnetic properties and electronic structure and optical spectrum calculations of the Heusler alloys Fe 2 TiAl, Fe 2 VAl and Fe 2 CrAl. We find that the drastic transformation of the band spectrum, especially near the Fermi level, when replacing the Me element (Me = Ti, V, Cr), is accompanied by a significant change in the electrical and optical properties. The electrical and optical properties of Fe 2 TiAl are typical for metals. The abnormal behavior of the electrical resistivity and the optical properties in the infrared range for Fe 2 VAl and Fe 2 CrAl are determined by electronic states at the Fermi level. Both the optical spectroscopic measurements and the theoretical calculations demonstrate the presence of low-energy gaps in the band spectrum of the Heusler alloys. In addition, we demonstrate that the formation of Fe clusters may be responsible for the large enhancement of the total magnetic moment in Fe 2 CrAl.

The temperature dependences of the resistivity, Hall coefficient, and magnetic susceptibility of iron-vanadium-aluminum alloys have been investigated. It has been established that the alloy Fe1.9V1.1Al exhibits semiconductor behavior for the method used to obtain uniform alloys. It is shown that at temperatures below 30K the semiconductor alloy possesses the characteristic low-temperature scale of the dependences observed, which could be responsible for the appearance of a narrow pseudogap in the electron density of states. A simple theoretical description of the effects of a pseudogap is proposed. A consistent fit of the theoretical to the experimental relations made it possible to determine the effective width of the pseudogap (∼1MeV) and its relative depth (∼102).