0.1 μm InGaAs/InAlAs/InP HEMT low noise amplifiers with compact stacked cascode design and its de-bias effect induced failure (DI31F)

Abstract

Compact Q-band low noise amplifier modules using 0.1 pm InGaAsAnAAsAnP HEMT MMTCs have been demonstrated with high performance and high manufacturability over a frequency band from 43.5 to 45.5 GHz at Northrop Grurnman Space Technology (NGST). The compact InP HEMT LNAs and modules are essential for phased-array applications. The LNA modules demonstrate noise figure less than 2.5 dB over the frequency band of 43.5 to 45.5 GHz The RF performance results achieved here, in conjunction with previously reported high reliability results, further demonstrate the readiness of NGST's 0. I pm TnP HEMT MMlC technology for advanced phased-array applications. In addition, Ig de-bias effect induced failure (DBIF) was observed on InP HEMT MMlCs with stacked cascode configuration subjected to elevated temperature lifetest. Accordingly, an acceptable lifetest temperature window was found to alleviate DBIF while performing Iifetest on InP HEMT MMICs with stacked cascode configuration.