0.10 µm Dense Hole Pattern Formation by Double Exposure Utilizing Alternating Phase Shift Mask Using KrF Excimer Laser as Exposure Light

Nakao, S.; Nakae, Aya; Tsujita, AtsumiYamaguchi; Wakamiya, Wataru

doi:10.1143/jjap.38.2686

Cited by 10 publications

(6 citation statements)

References 7 publications

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“…The other methods were the single exposure of the C/H pattern with quadrupole illumination, the single exposure of the vortex mask with conventional illumination, 1 and the double exposure of L&S patterns to single resist layer with dipole illumination ͑double L&S exposure method͒. 11. Figure 2 shows the double L&S exposure method as- Apr-Jun 2005/Vol.…”

Section: Simulationmentioning

confidence: 99%

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Contact hole formation by multiple exposure technique in ultralow <inline-formula><math display="inline" overflow="scroll"><msub><mi>k</mi><mrow><mn>1</mn></mrow></msub></math></inline-formula> lithography

Nakamura

Onishi

Satõ

et al. 2005

J. Micro/Nanolith. MEMS MOEMS

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The double line and space (L&S) formation method with L&S masks and dipole illumination was found to have high capability to fabricate ϳ0.3 k 1 contact hole (C/H) pattern. The procedure was as follows. The first L&S pattern was formed and was hardened to avoid the dissolution and mixing during the second resist coating. The second L&S pattern perpendicular to the first one was formed on the first resist pattern. The common space area of the two patterns became 1:1 C/H pattern. Simulation results showed that the double L&S formation method has much wider lithography latitude than other methods, such as single exposure of a C/H mask with quadrupole illumination, single exposure of a vortex mask with conventional illumination, and double exposure of L&S masks with dipole illumination to a single-layer resist. A 75 nm (0.30 k 1 ) 1:1 C/H pattern was fabricated. An 80 nm (0.32 k 1 ) 1:1 C/H pattern had 280 and 600 nm depth of focus in each resist layer at 8% exposure latitude. Moreover, a new method, in which a C/H mask replaces the L&S masks, is proposed to achieve cost reduction and the same high performance as the L&S masks. © 2005 Society of Photo-Optical Instrumentation Engineers.

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Section: Simulationmentioning

confidence: 99%

“…IDEAL Smile 8,9 is the combination of a mask and customized illumination. Double L&S exposure method 11 is a multiple exposure process. There are additional processes after pattern formation, such as thermal flow process, RELACS process, 10 and SAFIER process.…”

Section: Introductionmentioning

confidence: 99%

Contact hole formation by multiple exposure technique in ultralow <inline-formula><math display="inline" overflow="scroll"><msub><mi>k</mi><mrow><mn>1</mn></mrow></msub></math></inline-formula> lithography

Nakamura

Onishi

Satõ

et al. 2005

J. Micro/Nanolith. MEMS MOEMS

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“…have proposed a fine isolated hole formation by double exposure of x-and y-oriented isolated line patterns with AA-PSM [9]. This work has been followed for ultimately dense hole formation [10]. In these techniques, dark spots should be printed as holes to obtain high process latitude.…”

Section: Introductionmentioning

confidence: 99%

Quasi-iso-focal hole pattern formation by Checker-Board PSM (CB-PSM)

Nakao

Maejima

Minamide

et al. 2008

Optical Microlithography XXI

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A novel RET, which enables on-grid sub-50 nm hole pattern formation with ArF immersion lithography, has been developed. One of the authors has found quasi-iso-focal point image generation at the center of square area of high transmission embedded attenuating phase shift mask (EA-PSM), where four small openings are laid out at the corners of the area, utilizing an optimized quadrupole illumination. As an extension of continuous configuration, checker-board like mask pattern arrangement is created. In the mask, small openings and opaque pads are arranged like as checkerboard, whose base pitch is around resolution limit of targeted optical system. The mask pattern arrangement is named as "Checker-Board PSM (CB-PSM)". By eliminating any one opening from "checker-board", very fine point image is generated at the place. Because four openings around the eliminated one are necessary for the fine imaging characteristic, minimum distance between the point images is about the double of that for resolution limit. After simulation study of imaging, experiments are carried out to prove the fine imaging performance utilizing ArF immersion optics with NA=1.07 and a tri-level resist system. As a result, sub-50nm isolated hole is successfully formed with DOF larger than 200 nm. Simultaneously, ~ 60 nm semi-dense hole with pitch of 240 nm is printed with over 200 nm DOF. Moreover, application of conventional mask pattern arrangement, ultimately dense hole of 140nm pitch is well formed. As a conclusion, we believe that CB-PSM is a promising candidate for hole pattern formation at 32 nm node and beyond.

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“…Double exposure techniques are suitable for printing features at dimensions much smaller than those in current use including the printing of contact holes at 40% of the wavelength of light [1]. Resist profiles from double exposure methods are also well suited for comparison with simulation [2].…”

Section: Introductionmentioning

confidence: 99%

Verification of a high-resolution PEB parameter extraction methodology based on double exposure technique

Yuan

Neureuther

2002

SPIE Proceedings

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Resist images printed with sequential double exposures of cross lines are shown to distinguish among chemicallyamplified resist materials and the resulting corner rounding is shown to provide a quantitative means of determining resist model parameters. The experiments are carried out on an ASML stepper with Shipley UV210 and IBM APEX-E resists exposed at 248 nm. The former resist showed notably less corner rounding. Parameters in both Fickean and nonFickean models are determined through simulation interpretation of SEMs with the STORM program. The diffusivity in UV210 is found to be about 35% lower and less nonlinear than that in APEX-E.

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0.10 µm Dense Hole Pattern Formation by Double Exposure Utilizing Alternating Phase Shift Mask Using KrF Excimer Laser as Exposure Light

Cited by 10 publications

References 7 publications

Contact hole formation by multiple exposure technique in ultralow <inline-formula><math display="inline" overflow="scroll"><msub><mi>k</mi><mrow><mn>1</mn></mrow></msub></math></inline-formula> lithography

Contact hole formation by multiple exposure technique in ultralow <inline-formula><math display="inline" overflow="scroll"><msub><mi>k</mi><mrow><mn>1</mn></mrow></msub></math></inline-formula> lithography

Quasi-iso-focal hole pattern formation by Checker-Board PSM (CB-PSM)

Verification of a high-resolution PEB parameter extraction methodology based on double exposure technique

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