0.13-&amp;lt;tex&amp;gt;$muhbox m$&amp;lt;/tex&amp;gt;RF CMOS and Varactors Performance Optimization by Multiple Gate Layouts

Ho, Chia-Cheng; Kuo, Chia Wei; Chan, Yi‐Jen; Lien, W.Y.; Guo, Jyh–Chyurn

doi:10.1109/ted.2004.839868

Cited by 22 publications

(8 citation statements)

References 15 publications

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“…Operating frequency is fixed at two points of interest in the analysis as similar to Ref. [28]. The difference is that this work analyzes geometry dependence on IMD characteristics in the breakdown region.…”

Section: Resultsmentioning

confidence: 99%

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

Lee

Lin

2015

Microelectronics Reliability

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Section: Resultsmentioning

confidence: 99%

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

Lee

Lin

2015

Microelectronics Reliability

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“…In the simplest state, called capacitive-type load, a single varactor is used as reflective load. Of course, the CMOS varactors generally have low tuning range [15,16], which significantly limits the range of phase-shift. By increasing complexity of the reflective loads, generally using resonant networks [5,7,11], achievable range of phase-shift is increased.…”

Section: Reflective Loadmentioning

confidence: 99%

A 24GHz reflective-type phase shifter with constant loss in 0.18μm CMOS technology

Askari

Kaabi

Kavian

2015

AEU - International Journal of Electronics and Communications

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“…12 shows the simulated quality factor of this inductor using Ansoft Technologies' High Frequency Structure Simulator (Ansoft HFSS). The varactors are designed using an accumulation mode nMOSVAR with average capacitance of 150 fF [37], [38]. Fig.…”

Section: Cmos Implementation Of Nonlinear Lc Latticementioning

confidence: 99%

“…The ratio between minimum and maximum capacitances is around 3, which determines the nonlinearity of the lattice. Similar to [38], the varactors use a multifinger structure. The size and number of fingers is selected for a maximum nonlinearity and minimum series resistance.…”

Section: Cmos Implementation Of Nonlinear Lc Latticementioning

confidence: 99%

Harmonic Generation Using Nonlinear LC Lattices

Lilis

Park

Lee

et al. 2010

IEEE Trans. Microwave Theory Techn.

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Nonlinear LC lattices have shown promise for highpower high-frequency signal generation. Here we offer the first detailed study of the frequency response of these lattices, as well as a method designed to find input excitation frequencies that result in intense harmonic generation. The crux of the method is to locate regions in frequency space where the spectral norm of the lattice response matrix is large. When the fundamental excitation frequency (or one of its multiples) is located in these regions, the lattice harmonic response is intensified. These findings are supported by extensive numerical simulations and experimental measurements. We deal chiefly with a first-order dependency of capacitance (C) on voltage (V); however, it is also shown that lattices with higher order C-V dependencies achieve proportionally higher harmonic generation. Simulations using a 0.13-m CMOS process indicate harmonic generation at 400 GHz (three times the cutoff frequency of the fastest active device in this process), suggesting potential applications of this lattice topology in terahertz range devices.

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0.13-<tex>$muhbox m$</tex>RF CMOS and Varactors Performance Optimization by Multiple Gate Layouts

Cited by 22 publications

References 15 publications

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

A 24GHz reflective-type phase shifter with constant loss in 0.18μm CMOS technology

Harmonic Generation Using Nonlinear LC Lattices

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