0.15 μm InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield V-band power MMICs

Lai, R.; Biedenbender, M.; Lee, J.; Tan, K. H.; Streit, D.C.; Liu, P.H.; Hoppe, Morten; Allen, B.

doi:10.1109/gaas.1995.528972

Cited by 14 publications

(12 citation statements)

References 6 publications

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“…The AlGaN/GaN HEMT fabrication process is based on the TRW's mature GaAs and InP HEMT processes designed for high-volume production [7], [8]. Therefore, it typically demonstrates excellent uniformity and reproducibility.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

AlGaN/GaN HEMTs---operation in the K-band and above

Smorchkova¹,

Wójtowicz²,

Sandhu³

et al. 2003

IEEE Trans. Microwave Theory Techn.

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Section: Device Structure and Fabricationmentioning

confidence: 99%

AlGaN/GaN HEMTs---operation in the K-band and above

Smorchkova¹,

Wójtowicz²,

Sandhu³

et al. 2003

IEEE Trans. Microwave Theory Techn.

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“…Furthermore, in [7] it was shown that a GB is equivalent to the paraxial field of a point source in complex space.…”

Section: Introductionmentioning

confidence: 98%

“…This paper describes a high-performance downconverting receiver module, based on InP and GaAs MMICs, that has been developed for point-to-point telecommunications links operating in the frequency range of 82-104 GHz. The amplifiers, designed and tested at CSIRO, were made by Northrup Grumman Space Technologies (NGST, formerly TRW) using standard 0.1-m InP HEMT [6] and 0.15-m GaAs pHEMT processes [7]. …”

mentioning

confidence: 99%

W‐band receiver module using indium phosphide and gallium arsenide MMICs

Archer

Shen

2004

Micro & Optical Tech Letters

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tuning resolution was found to be 1 pm, due to the limitation of the OSA and TLS, which exhibited the best resolution of 1 pm. The tuning repeatability was found to be 0.4% over the entire tuning range of 2 nm. The range can be improved by optimizing the package design of the carbon-fiber composite. INTRODUCTIONMillimetre-wave operation is of growing importance to the distribution of broadband telecommunication services and to wireless, local-area networks [1,2]. Millimetre-wave transceivers based on GaAs and InP MMICs are key components of these wideband systems [3,4]. In particular, InP-based high electron mobility transistors (HEMTs) have demonstrated the highest gain, lowest noise figure, and highest frequency capability of any three terminal transistor [5]. This paper describes a high-performance downconverting receiver module, based on InP and GaAs MMICs, that has been developed for point-to-point telecommunications links operating in the frequency range of 82-104 GHz. The amplifiers, designed and tested at CSIRO, were made by Northrup Grumman Space Technologies (NGST, formerly TRW) using standard 0.1-m InP HEMT [6] and 0.15-m GaAs pHEMT processes [7]. THE MMICsThe receiver chip-set comprises a pair of W-band InP amplifiers connected in cascade, with output signal connected to a subharmonically pumped image-reject mixer (SHPIRM), configured as a down-converter. The local oscillator drive to the mixer is provided by a medium-power V-band amplifier. The amplifiers were fabricated by NGST (see above), whereas the mixers were fabricated at CSIRO.The MMICs were designed using device-and circuit-modelling techniques that have yielded first-pass design success for many mm-wave ICs designed at CSIRO. Small-signal InP HEMT models were developed by TRW using carefully designed on-wafer calibration and device embedding circuits. The models have been verified and optimized to frequencies above 120 GHz, through the design and evaluation of a range of amplifier circuits [8]. In addition, standard Agilent-EESOF simulator models for the thinfilm capacitors, open-circuit stubs, Lange couplers, and the spiral IF hybrid were invalid because either the dimensions of the element, or the operating frequency, were outside the specified limits. Therefore, S-parameter matrices describing these elements were derived using electromagnetic simulator software. The four-stage W-band InP HEMT amplifier has been described in a previous paper [9]. The gain is 15.5 dB Ϯ 1.5 dB over the 82-112-GHz range. The input and output return loss is better than 10 dB over the same range. Each stage of the amplifier was biased at 1.2-V drain-supply voltage and with drain current in the range 4 -6 mA, optimized to give the best frequency response. The V-band pHEMT amplifier is also a four-stage microstrip design. The GaAs pHEMT devices have a gate length of 0.15 m and a four-finger, interdigitated geometry with a total width of 200 m. The performance of the amplifier, measured on-wafer, is shown in Figure 1. The gain is 25 dB Ϯ 2 dB over the 40 -55-GH...

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“…This paper describes an up-converting transmitter module, based on GaAs MMICs, that has been developed for a point-to-point telecommunications link in the 83-87-GHz band. The amplifiers, designed and tested at CSIRO, were made by Northrup Grumman Space Technologies (NGST, formerly TRW) using a standard 0.15-m GaAs pHEMT process [5]. …”

mentioning

confidence: 99%

W‐band transmitter module using gallium arsenide mmics

Archer¹,

Shen²

2004

Micro & Optical Tech Letters

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through the straight waveguide with 4-m width are plotted in Figure 4. Similar single-mode outputs for TE and TM polarizations are observed. By using the cutback method, the propagation losses were measured, as listed in Table 1. The propagation loss of TM polarization is slightly larger than that of TE polarization. Moreover, waveguides with wider widths have smaller propagation losses.Waveguide bends are basic components of integrated optical devices. They are often used to change the lightwave-propagation direction in, for example, Mach-Zehnder modulators and directional couplers. For comparison, several waveguide bends with different bending angles were fabricated. Calculated and measured results are shown in Figure 5. The normalized transmission efficiency of the device was obtained by calculating the ratio of the total output power through the bent waveguide to that through the straight waveguide. Numerical simulations were performed using the 3D beam-propagation method. As can be seen, the measured values are quite consistent with the simulated ones. Moreover, the waveguide bends with wider widths exhibit higher transmission efficiencies. CONCLUSIONWe have successfully fabricated single-mode BCB optical waveguides by using single-step electron-beam direct writing, which has the significant advantage of not requiring any photolithography, chemical wet etching, or dry etching. The refractive indices increased by about 0.27% and 0.26% for TE and TM polarizations, respectively, under an electron-beam irradiation dose of 800 C/cm 2 . The refractive index of the irradiated film remained unchanged after being stored at 120°C for 500 hr. With a width of 4 m, we have observed propagation losses of 0.82 and 0.9 dB/cm for TE and TM polarizations, respectively. In addition, given a width of 6 m, the propagation losses are 0.76 and 0.86 dB/cm for TE and TM polarizations, respectively. Waveguide bends with various bending angles were also demonstrated. They exhibit characteristics that agree with the simulation results. These preliminary results show that this single-step process provides a simple and flexible approach to the fabrication of polymer waveguide devices. Further application of electron-beam-irradiated BCB waveguides will be of interest in the future. ACKNOWLEDGMENTThis work was supported by the National Science Council, Taipei, Taiwan, Republic of China, under contract no. NSC92-2215-E-002-009. Millimetre-wave operation is of growing importance to the distribution of broadband telecommunication services and to wireless, local-area networks [1, 2]. Millimetre-wave transceivers based on GaAs and Indium Phosphide (InP) MMICs are a key component of these wideband systems [3, 4]. However, wider use of MMICbased systems requires lower-cost chips and packaging solutions. 0.15-m GaAs pHEMT MMICs satisfy the first of these requirements, thus providing a cheaper, higher output power alternative for transmitter applications when compared to InP circuits. This paper describes an up-converting transmitter module, based...

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0.15 μm InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield V-band power MMICs

Cited by 14 publications

References 6 publications

AlGaN/GaN HEMTs---operation in the K-band and above

AlGaN/GaN HEMTs---operation in the K-band and above

W‐band receiver module using indium phosphide and gallium arsenide MMICs

W‐band transmitter module using gallium arsenide mmics

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