2002
DOI: 10.1109/22.981288
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0.25-μm BiCMOS receivers for normal and micro GSM900 and DCS 1800 base stations

Abstract: This paper describes two integrated RF receivers with low noise and high linearity for GSM900 and DCS1800 base stations. The chips were fabricated using a 0.25-m BiCMOS process. This is the first silicon-integrated radio front-end that can be used to meet global system for mobile communications normal and micro base-station specifications reported to date. Noise figure, gain, and output infrared third-order intercept point are 2.1 dB, 25.8 dB, and 25.7 dBm for GSM900 and 3.3 dB, 21.3 dB, and 22.5 dBm for DCS18… Show more

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Cited by 7 publications
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