0.35-μm lithography using off-axis illumination

Luehrmann, Paul Frank; Oorschot, Peter van; Jasper, Hans; Stalnaker, Sunny; Brainerd, Steve K.; Rolfson, J. Brett; Karklin, Linard

doi:10.1117/12.150419

Cited by 13 publications

(4 citation statements)

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“…Higher resolution with a 45-nm half pitch is demonstrated in experiments at an air distance of 40 nm, which could be further extended to approximately 90 nm via k x,inc = 2 k 0 illumination, as illustrated in simulation. As an analogue with the resolution enhancement techniques in conventional projection photolithography 34 36 , this investigation validates the OAI for deep subwavelength plasmonic lens imaging far exceed the near-field diffraction limit. The proposed approach will probably lead to potential applications in nanolithography and high-density optical storage, among other fields.…”

Section: Discussionsupporting

confidence: 67%

Going far beyond the near-field diffraction limit via plasmonic cavity lens with high spatial frequency spectrum off-axis illumination

Zhao

Luo

Zhang

et al. 2015

Sci Rep

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For near-field imaging optics, minimum resolvable feature size is highly constrained by the near-field diffraction limit associated with the illumination light wavelength and the air distance between the imaging devices and objects. In this study, a plasmonic cavity lens composed of Ag-photoresist-Ag form incorporating high spatial frequency spectrum off-axis illumination (OAI) is proposed to realize deep subwavelength imaging far beyond the near-field diffraction limit. This approach benefits from the resonance effect of the plasmonic cavity lens and the wavevector shifting behavior via OAI, which remarkably enhances the object’s subwavelength information and damps negative imaging contribution from the longitudinal electric field component in imaging region. Experimental images of well resolved 60-nm half-pitch patterns under 365-nm ultra-violet light are demonstrated at air distance of 80 nm between the mask patterns and plasmonic cavity lens, approximately four-fold longer than that in the conventional near-field lithography and superlens scheme. The ultimate air distance for the 60-nm half-pitch object could be theoretically extended to 120 nm. Moreover, two-dimensional L-shape patterns and deep subwavelength patterns are illustrated via simulations and experiments. This study promises the significant potential to make plasmonic lithography as a practical, cost-effective, simple and parallel nano-fabrication approach.

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Section: Discussionsupporting

confidence: 67%

Going far beyond the near-field diffraction limit via plasmonic cavity lens with high spatial frequency spectrum off-axis illumination

Zhao

Luo

Zhang

et al. 2015

Sci Rep

View full text Add to dashboard Cite

show abstract

“…As design geometries and accompanying process windows shrank, additional resolution enhancement techniques (RETs) arose, such as phase shift masks 3,4 (PSMs) and off-axis illumination. 5,6 The latter was shown to be effective in enhancing the depth of focus for dense patterns, and the geometrical processing engines also began to be used to place sub-resolution assist features (SRAF) adjacent to isolated patterns. Thus the transitions from 350 to 250 nm, then to 180 nm technology nodes were accompanied by the increasing utilization of rule-based optical proximity correction (OPC).…”

Section: Introductionmentioning

confidence: 98%

Challenges for patterning process models applied to large scale

Sturtevant

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Full-chip patterning simulation has been utilized in semiconductor manufacturing for more than ten years, and has been a key enabler for multiple technology generations, from 130 nm to the emerging 14 nm node. This span has featured two wavelength changes, a progression of optical NA increases (and a subsequent decrease), and a variety of patterning processes and chemistries. Full-chip patterning simulations utilize quasirigorous optical models and semiempirical resist and etch process models. There has been steady improvement in the predictive power and computational efficiency of the patterning models used in full chip simulation tools, and this paper will review this progress as well as the factors that ultimately limit the predictive capability of such models. In addition, this paper will outline the new process simulation challenges that are emerging as the industry approaches sub-0.25 k1 patterning. These challenges lie principally in improving accuracy and predictive capability, including 3D effects, for an expanding set of processes and failure modes, while maintaining or improving full chip data preparation cycle times.

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“…The process window cannot be improved simultaneously for all geometric features such as 45°l ines, contacts and combinations of dense and isolated lines [4]• These limitations are especially prohibitive for non-memory products like ASICs and microprocessors. DUV wafer steppers, at 248 nm wavelength, offer inherent advantages in this respect, since the quality of the aerial image allows the user to continue with existing mask fabrication and design technology.…”

Section: Introductionmentioning

confidence: 99%

Wide-field deep-UV wafer stepper for 0.35-μm production

et al. 1993

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Device manufacturers and lithographic equipment makers are presently preparing for circuit production at design rules of 0.35 im. It is evident that optical steppers will be the production tools, but the choice between i-line and deep UV (DUV) steppers (248 nm) is still a matter of debate. This paper reports the progress made in the development of DUV steppers for production purposes. As a successor to the earlier DUV machine, discussed at the SPIE conference in 1 990, which uses a TTL alignment system and automatic excimer laser wavelength control, a new DUV stepper has recently been developed with a new lens at 248 nm wavelength, a 29.7 mm diameter field and an numerical aperture (NA) of 0.5. The stepper body is similar to that of the wide field, i-line systems which have been in production since 1 991. The key design parameters and results will be reported, including imaging performance down to 0.25 tm in both negative and positive resists and a high overlay accuracy based on the TTL alignment system. The capability of matching with i-line systems will also be reported.

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0.35-μm lithography using off-axis illumination

Cited by 13 publications

References 0 publications

Going far beyond the near-field diffraction limit via plasmonic cavity lens with high spatial frequency spectrum off-axis illumination

Going far beyond the near-field diffraction limit via plasmonic cavity lens with high spatial frequency spectrum off-axis illumination

Challenges for patterning process models applied to large scale

Wide-field deep-UV wafer stepper for 0.35-μm production

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