Summary
Fractional‐order blocks, including differentiators, lossy and lossless integrators as well as filters of order 1 + a (0 < a < 1), are presented in this paper. The proposed topologies offer the benefit of ultra low‐voltage operation; in addition, reduced circuit complexity is achieved compared to the corresponding companding schemes, which have been already introduced in the literature. The ultra‐low voltage operation is performed through the employment of metal oxide semiconductor transistors biased in the subthreshold region. The reduction of circuit complexity is achieved through the utilization of current mirrors as active elements for realizing the required building blocks. The performance of the proposed fractional‐order circuits has been evaluated through the Analog Design Environment of the Cadence software and the design kit provided by the Taiwan Semiconductor Manufacturing Company (TSMC) 180 nm complementary metal oxide semiconductor process. Copyright © 2015 John Wiley & Sons, Ltd.