2014
DOI: 10.1080/00207217.2014.901425
|View full text |Cite
|
Sign up to set email alerts
|

0.5 V sinh-domain differentiator

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2014
2014
2021
2021

Publication Types

Select...
2
1

Relationship

1
2

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 12 publications
0
3
0
Order By: Relevance
“…where IB is the bias current of the transconductor, n is the subthreshold slope factor (1 < n < 2) of the MOS transistor, VT is the thermal voltage (≈26 mV at 27 °C ) and   ˆ,   ˆare the voltages at the non-inverting and inverting inputs, respectively [5][6][7]. (a)…”
Section: Building Blocks For Sinh-domain Filteringmentioning
confidence: 99%
See 2 more Smart Citations
“…where IB is the bias current of the transconductor, n is the subthreshold slope factor (1 < n < 2) of the MOS transistor, VT is the thermal voltage (≈26 mV at 27 °C ) and   ˆ,   ˆare the voltages at the non-inverting and inverting inputs, respectively [5][6][7]. (a)…”
Section: Building Blocks For Sinh-domain Filteringmentioning
confidence: 99%
“…The expression for the output current is given by the formula iOUT = IDIV  (i1/i2), where IDIV is the bias current of the divider and i1 and i2 are two and one-quadrant input currents, respectively [5][6][7]. …”
Section: Building Blocks For Sinh-domain Filteringmentioning
confidence: 99%
See 1 more Smart Citation