0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm

Lindberg, Hans; Strassner, M.; Gerster, Eckart; Larsson, Anders

doi:10.1049/el:20040435

Cited by 37 publications

(19 citation statements)

References 5 publications

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“…Excessive material strain, arising from the difference between the lattice constants of the semiconductor layers, can lead to formation of crystalline defects and ultimately to relaxation of the layered structure. The 6 Advances in Optical Technologies InP-based gain with InP-based Bragg reflector [64] Compromised reflectivity, Increased stack thickness, low thermal conductance of the DBR Hybrid mirrors with InP-based gain [7] Compromised thermal conductance…”

Section: Wavelength Coveragementioning

confidence: 99%

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Guina

Härkönen

Korpijärvi

et al. 2012

Advances in Optical Technologies

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We review the recent advances in the development of semiconductor disk lasers (SDLs) producing yellow-orange and mid-IR radiation. In particular, we focus on presenting the fabrication challenges and characteristics of high-power GaInNAs-and GaSbbased gain mirrors. These two material systems have recently sparked a new wave of interest in developing SDLs for high-impact applications in medicine, spectroscopy, or astronomy. The dilute nitride (GaInNAs) gain mirrors enable emission of more than 11 W of output power at a wavelength range of 1180-1200 nm and subsequent intracavity frequency doubling to generate yelloworange radiation with power exceeding 7 W. The GaSb gain mirrors have been used to leverage the advantages offered by SDLs to the 2-3 μm wavelength range. Most recently, GaSb-based SDLs incorporating semiconductor saturable absorber mirrors were used to generate optical pulses as short as 384 fs at 2 μm, the shortest pulses obtained from a semiconductor laser at this wavelength range.

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Section: Wavelength Coveragementioning

confidence: 99%

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Guina

Härkönen

Korpijärvi

et al. 2012

Advances in Optical Technologies

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“…One of the most important properties of VECSEL lasers is their wavelength versatility: VECSELs have been made with output wavelengths ranging from 244 nm [77] and 338 nm [24,78] in the UV; through the 460-675 nm range of blue, green, yellow, orange, and red in the visible (Chapter 3) [22, 24, 52-54, 58, 79]; through the 0.9-2.4 mm in the near-infrared (NIR) (Chapter 4) [18,23,67,68,80,81]; to the 5 mm in the mid-IR [82][83][84][85]. In principle, any wavelength in this range is accessible by design.…”

Section: Vecsel Wavelength Versatility Through Materials and Nonlineamentioning

confidence: 99%

“…Using group III-V semiconductor GaAs substrate material system with its ternary (e.g., InGaP, AlGaAs, InGaAs, GaAsP, GaAsSb), quaternary (e.g., InGaNAs, InAlGaAs), and quinary (e.g., InAlGaAsP) alloys, VECSEL lasers have been demonstrated with emission wavelengths in the 660-1300 nm wavelength range [18,23,68,79,[86][87][88]. InP-based material system using quaternary alloys (e.g., InGaAsP, InGaAlAs) allows VECSEL lasers to access the 1500-1600 nm optical fiber communication wavelength regions [23,80,[89][90][91][92][93]. Starting with GaSb substrate with ternary (e.g., GaInSb, AlAsSb) and quaternary (e.g., GaInAsSb, GaAlAsSb) alloys, VECSELs with emission wavelengths in the 2.0-2.3 mm range have been demonstrated (Chapter 4) [23,48,81,94].…”

Section: Wavelength Versatility Through Semiconductor Materials and Smentioning

confidence: 99%

“…Low refractive index contrast in this material system leads to thick, high thermal impedance laser mirrors; nevertheless, VECSEL output powers as high as 0.8 W have been demonstrated [80,121]. Using wafer fusion with GaAssubstrate-based mirrors, the InGaAlAs/InP active region has demonstrated still higher VECSEL powers of 2.6 W [97,98].…”

Section: Demonstrated Power Scaling and Wavelength Coveragementioning

confidence: 99%

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VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

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Since its invention and demonstration in 1960, several types of laser have been developed, such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used in a wide range of important applications, particularly in optical fiber communication, optical digital recording (CD, DVD, and Blu-ray), laser materials processing, biology and medicine, spectroscopy, imaging, entertainment, and many others. A number of properties enable the application of lasers in these diverse areas, each application requiring a particular combination of these properties. Some of the most important laser properties are laser emission wavelength; output optical power; method of laser excitation, whether by optical pumping or electrical current injection; laser power consumption and efficiency; high-speed modulation or short pulse generation ability; wavelength tunability; output beam quality; device size; and so on. Thus, optical fiber communication [2], a major application that enables modern Internet, commonly requires lasers with emission wavelengths in the 1.55 mm lowloss band of glass fibers and with single-transverse mode output beams for coupling into single-mode optical fibers. Typically, a given laser type excels in some of these properties, while exhibiting shortcomings in others. For example, by using different material compositions and structures, the most widely used semiconductor diode laser [3][4][5][6][7][8][9][10][11][12] can cover a wide range of wavelengths from the ultraviolet (UV) to the mid-IR, can be advantageously driven by diode current injection, and is very compact and efficient. However, the good beam quality, that is, single-transverse mode nearcircular beam operation, can be typically achieved in semiconductor lasers only for output powers below 1 W. Much higher power levels are achievable from semiconductor lasers only with large aspect ratio highly multimoded poor quality optical beams. On the other hand, the solid-state lasers [13,14], including fiber lasers [15], can emit hundreds of watts of output power with excellent beam quality, however, their emission wavelengths are restricted to discrete values of electronic transitions in ions, such as the classic 1064 nm wavelength of the Nd:YAG laser, making them Semiconductor Disk Lasers. Physics and Technology. Edited by Oleg G. Okhotnikov

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“…The heatspreader acts both as a conduit for heat removal directly from the device surface closest to the heat source and increases the effective area over which heat is removed via the substrate with little or no post processing to the VECSEL wafer. A number of high thermal conductivity materials have been used such as sapphire [28], silicon [29], Silicon Carbide [30] and diamond [31,32].…”

Section: Thermal Managementmentioning

confidence: 99%

High‐power vertical external‐cavity surface‐emitting lasers

Hopkins

Calvez

Kemp

et al. 2006

Phys. Status Solidi (c)

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Recently multiwatt power levels have been generated from Vertical External-Cavity Surface-Emitting Lasers in high quality spatially symmetric output beams. While these results are very impressive for a high brightness semiconductor source, they have largely been achieved in a wavelength band already well served by conventional solid-state lasers. To fully realise the potential of this technology, the wavelength versatility offered by the semiconductor materials must be utilized. Significant power scaling at wavelengths away from 1µm is a key technical challenge for the VECSEL developer

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0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm

Cited by 37 publications

References 5 publications

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

High‐power vertical external‐cavity surface‐emitting lasers

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