0.99 mW 3–10 GHz common-gate CMOS UWB LNA using T-match input network and self-body-bias technique

Chang, Jin-Fa; Lin, Yo‐Sheng

doi:10.1049/el.2011.0619

Cited by 70 publications

(24 citation statements)

References 8 publications

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“…The distributed amplifier topology provides a moderate gain over a wide bandwidth occupying less area but it consumes very large power (Pino et al, 2010). The CG amplifier topology achieves wideband input matching and better input-output isolation but it exhibits higher noise figure and lower power gain (Chang and Lin, 2011). The inductive source degeneration amplifier provides wider bandwidth, higher power gain and better noise figure.…”

Section: Methodsmentioning

confidence: 99%

A 2-12 GHz Low Noise Amplifier Design for Ultra Wide Band Applications

Vaithianathan¹,

Raja²,

Srinivasan³

2012

American Journal of Applied Sciences

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Problem statement: The Low Noise Amplifier (LNA) is a core block of an Ultra Wide Band (UWB) receiver since it amplifies a very weak signal received at the antenna to acceptable levels while introducing less self-generated noise and distortions. The LNA design poses a unique challenge as it requires simultaneous optimization of various performance parameters like power gain, input matching, noise figure, power consumption and linearity over the entire UWB band. Approach: In this study, a three stage LNA is proposed with a resistive current reuse network as a first stage, a cascode amplifier with shunt-series peaking and a local active feedback as a second stage and a voltage buffer as a third stage. A resistive current reuse network is used to achieve better linearity, low noise figure, better input matching with lesser power consumption. A cascode stage with shunt-series peaking and a local active feedback is used to enhance the bandwidth and reverse isolation. A voltage buffer is used as an output stage to achieve better output matching. Results: The proposed LNA is designed using 0.18 Âµm CMOS technology and is simulated to verify its performance. It achieves a power gain of greater than 17.3 dB, a noise figure less than 2.45 dB with an input matching less than -11.2 dB over a 3-dB bandwidth of 2-12 GHz. The achieved output matching is below -12 dB, the reverse isolation is below -68 dB with a Rolletâs stability factor is greater than 1000 to ensure better stability. This LNA also ensures better linearity with an IIP₃ of 3 dBm at 7.5 GHz with low power consumption of 10.7 mW. Conclusion/Recommendations: From the simulation results it is evident that the presented LNA claims the advantages of very high gain, better input matching with low noise figure and less power consumption.

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Section: Methodsmentioning

confidence: 99%

A 2-12 GHz Low Noise Amplifier Design for Ultra Wide Band Applications

Vaithianathan¹,

Raja²,

Srinivasan³

2012

American Journal of Applied Sciences

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“…For (CG) LNA topology usually can achieve wideband input impedance matching and the best input-output isolation. However, it has a high noise figure [9]. (CG) topology can also lower power consumption, robust again parasitic and stabilize the LNA circuit [6].…”

Section: A Common Source (Cs) Common Gate(cg) and Cascode Configuramentioning

confidence: 99%

Design of Triple-Stage Cascoded LNA Amplifiers using Inductive Drain Feedback (IDF) Technique for WiMAX Application

PONGOT¹,

OTHMAN²

2015

ijeei

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This paper presents the design of triple stages cascoded low noise amplifier using an inductive drain feedback (IDF) technique which operates at frequency 5.8 GHz for WiMAX application. The triple stages cascoded LNA was designed using the inductive drain feedback, inductive generation to the source, and the T-network at the input and output terminal as a matching technique. This LNA produced a gain (S 21 ) of 79.16 dB and the noise figure (NF) of 0.71 dB. The output reflection (S 22 ), input reflection (S 11 ) and return loss (S 12 ) are -12.56, -11.96 dB and -100.22 dB respectively. The measured 3dB bandwidth of 1.76 GHz has been achieved. The input sensitivity is -92 dBm exceeded the standards required by the IEEE 802.16. The amplifier it is implemented using superHEMT FHX76LP transistor devices. The designed circuit is simulated with Ansoft Designer SV.

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“…Owing to the fact that the life expectancy of an LNA is predicated upon its power consumption, the power consumption should be considerably minimized. Successful approaches such as current-reuse topology and forward body bias technique are utilized to bring down the power consumption [11][12][13][14][15]. In this paper, Chebyshev filter, forward body bias technique, cascode LNA, and commonsource LNA are used to form the proposed LNA in 0.13 μm CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology

Jobaneh

2020

Active and Passive Electronic Components

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The calculation and design of an ultralow-power Low Noise Amplifier (LNA) are proposed in this paper. The LNA operates from 5 GHz to 10 GHz, and forward body biasing technique is used to bring down power consumption of the circuit. The design revolves around precise calculations related to input impedance, output impedance, and the gain of the circuit. MATLAB and Advanced Design System (ADS) are utilized to design and simulate the LNA. In addition, TSMC 0.13 μm CMOS process is used in ADS. The LNA is biased with two different voltage supplies in order to reduce power consumption. Noise Figure (NF), input matching (S11), gain (S21), IIP3, and power dissipation are 1.46 dB–2.27 dB, −11.25 dB, 13.82 dB, −8.5, and 963 μW, respectively.

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0.99 mW 3–10 GHz common-gate CMOS UWB LNA using T-match input network and self-body-bias technique

Cited by 70 publications

References 8 publications

A 2-12 GHz Low Noise Amplifier Design for Ultra Wide Band Applications

A 2-12 GHz Low Noise Amplifier Design for Ultra Wide Band Applications

Design of Triple-Stage Cascoded LNA Amplifiers using Inductive Drain Feedback (IDF) Technique for WiMAX Application

The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology

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