1.16 μm InAs/GaAs Quantum Dot Laser grown by Metal Organic Chemical Vapor Deposition

Abstract

In this study, a 1.16 µm InAs/GaAs quantum dot laser operating at continuous wave condition grown by metal organic chemical vapor deposition was demonstrated. For the quantum dot laser diode with 2 mm cavity length and 10 µm stripe width bonded on a heat sink, continuous wave lasing can still be observed up to 55 • C. At room temperature, threshold current density was as low as 950 A/cm 2 and the output power reached 25.4 mW under 300 mA injection current (1.58I th). In addition, the external differential efficiency of 43.1%, the internal quantum efficiency of 59.6% and the internal loss of 2.2 cm −1 have been obtained, respectively.