1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material

Liu, Xinke; Liu, Qiang; Li, Chao; Wang, Jianfeng; Wang, Yu; Xu, Ke; Ao, Jin‐Ping

doi:10.7567/jjap.56.026501

Cited by 54 publications

(28 citation statements)

References 17 publications

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“…In summary, the benchmark for different edge termination techniques is shown in Figure 10. A resistive FP termination device with low donor concentration (ND = 1 × 10 14 cm −3 ) has the highest BV (1.6 kV) in this map [71], a TiN-based GaN SBD is followed (1.2 kV) without any termination technique [82]. Utilizing a metal FP termination with low drift layer donor concentration (ND=8 × 10 15 cm −3 ) can significantly increase the BV (1.1 kV) [83].…”

Section: N-based Terminationmentioning

confidence: 94%

“…After that, the samples were annealed at a certain condition to further improve the ohmic behavior. (Ti/Al/Ni/Au at 600-840 • C in N 2 for 20-30s [2,26,29,33,65,67,71,72]; Ti/Al/Pt/Au at 700 • C-850 • C in N 2 for 30s [5,53,54,86]; Ti/Al [19,31,37,38,68,75,76,82]; Ti/Al/Ti/Au [32,67,83,87]; Ti/Al/Au [18,81].) Then, the nickel layer is formed on ohmic contact metal by an electroplating process, as shown in Figure 11b.…”

Section: Fabrication Steps Of Vertical Gan Sbdsmentioning

confidence: 99%

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Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

et al. 2019

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Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

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Section: N-based Terminationmentioning

confidence: 94%

Section: Fabrication Steps Of Vertical Gan Sbdsmentioning

confidence: 99%

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

et al. 2019

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“…Thicker DW in SBDs with 30 μm DLs results in larger VBD. Figure 15 shows the plot of V BD vs. DLT for the state-of-the-art reported vertical SBDs [63][64][65][66][67][68]. Saitoh et al realized a V BD of 1100 V for the SBDs with DLT of 5 µm after using a field plate (FP) [63].…”

Section: Breakdown Voltage Of Sbdmentioning

confidence: 99%

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Sandupatla

Arulkumaran

et al. 2020

Micromachines

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Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of −2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (−20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at −750 V.

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“…Since GaN free‐standing substrates became commercially available, vertical GaN Schottky diodes have been intensively studied for high‐power applications . Free‐standing GaN substrates allow epitaxial growth of a thick drift layer with low dislocation density.…”

Section: Introductionmentioning

confidence: 99%

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

Shiojima

Horikiri

Yoshida

et al. 2019

Physica Status Solidi (b)

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The effect of the surface off‐angle toward either the a‐ or m‐axis on the defect formation is characterized using deep‐level transient spectroscopy (DLTS) in conjunction with the carrier concentration for Ni Schottky contacts formed on n‐GaN drift layers. In both noncontact and conventional capacitance–voltage results, off‐angle dependence on carrier concentration is observed. For all samples, a large dominant peak appears at approximately 270 K in the DLTS spectra and is attributed to E3 (EC − 0.57–0.61 eV) defects. Carbon atoms can act as carrier compensators and form E3 defects. These results can be interpreted based on how C incorporation during crystal growth depends on the off‐angle.

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1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material

Cited by 54 publications

References 17 publications

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

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