1.2 µm range GaInAs SQW lasers using Sb assurfactant

Low threshold GaInAs quantum well lasers grown under low growth rate by solid‐source MBE for 1200 nm wavelength range

“…5, J tr and G 0 are estimated to be 97 A/cm 2 and 1620 cm -1 , respectively. The observed threshold current density is the lowest for MBE grown GaInAs/GaAs lasers emitting around 1200 nm including GaInAsSb QWs [8,9] and is almost comparable to that of low threshold MOCVD grown GaInAs/GaAs lasers [1].…”

“…VCSELs by MOCVD showed good lasing performances [5] and the gain-cavity detuning technique extends the lasing wavelength beyond 1250 nm [6,7]. On the other hand, the lasing performance of GaInAs/GaAs lasers grown by MBE around 1200 nm, including GaInAsSb QWs [8,9] has been insufficient compared to MOCVD grown lasers [1].…”

Effect of interface roughness on Auger recombination in semiconductor quantum wells

“…18 Finally, developing and implementing surfactant techniques could be important experimental pathway in order to reduce the interface roughness. 55 A combination of the aforementioned methods would potentially minimize interface roughness in semiconductor QWs, and controlling Auger recombination processes for improved device performance.…”

Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy

“…Highly strained GaInAs quantum wells (QW) on a GaAs have been studied by metal-organic chemical vapor deposition (MOCVD) and realized good lasing performances at 1.2 mm range [1][2][3][4]. For the case of molecular beam epitaxy (MBE), it is reported that introduction of dilute antimony (Sb) improves lasing performance of highly strained GaIn(N)As QWs by suppression of three-dimensional (3D) growth which leads to deterioration of the optical property of highly strained QWs [5][6][7][8]. However, the detailed mechanism and optimum growth condition of the Sb-introduction have been investigated a little.…”