1.29-W/mm<sup>2</sup> 23-dBm 66-GHz Power Amplifier in 55-nm SiGe BiCMOS With In-Line Coplanar Transformer Power Splitters and Combiner

Pepe, Domenico; Zito, Domenico; Pallotta, Andrea; Larcher, Luca

doi:10.1109/lmwc.2017.2764749

Cited by 22 publications

(5 citation statements)

References 5 publications

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“…With the rapid development of wireless communication, the increasing demands in the phased array radars [1][2][3][4], mobile communication systems [5][6][7], and satellite communication have motivated for GaN-based radio-frequency (RF) power amplifiers (PAs) [8,9]. GaN-based RF PAs are one of the key modules for a wireless communication system (WCS) comprised of the transmitting or receiving antennas [10,11], and usually preferred over GaAs and Si-based PAs due to the highpower capabilities, high breakdown voltage, and reliability in high temperature [12].…”

Section: Introductionmentioning

confidence: 99%

Experimental investigation on the performance degradations of the GaN class-F power amplifier under humidity conditions

Zhou

2021

Semicond. Sci. Technol.

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To investigate the humidity dependency of the specifications for a GaN class-F power amplifier (PA), humidity experiments are conducted in the Vötsch Industrietechnik SC3 1000 MHG environmental test chamber. The experimental results show that the key specifications of the PA, such as the output power and power-added efficiency, the large-signal gain, and the drain current show degradation as humidity increases. The reason for this degradation may be the reduction of the 2DEG mobility density due to surface degradation at AlGaN recess regions caused by diffusion phenomena of Ga, and Al. The results concluded here would be helpful for the PA designers to understand the humidity effects on the key specifications for the GaN class-F PA comprehensively, so that the designers could consider the effects on the design cycle of the compensation circuits in advance.

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Section: Introductionmentioning

confidence: 99%

Experimental investigation on the performance degradations of the GaN class-F power amplifier under humidity conditions

Zhou

2021

Semicond. Sci. Technol.

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“…As the detection distance increases, the output power of PA needs to be greater. To achieve a high output power in mmwave, power combiners [4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19], push-pull structure [20,21], the drainto-gate inductive feedback [22,23], and other technologies are adopted for different PA scenarios separately. No matter which technology is used, there are some fundamental issues, such as matching network and the layout, that appear in most of the structures and techniques.…”

Section: Introductionmentioning

confidence: 99%

A 13dBm 25.7% PAE 25.3-dB gain E-band power amplifier in 40nm CMOS technology

Huang,

Que,

Wang

2024

IEICE Electron. Express

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An E-Band three-stage power amplifier (PA) in 40nm CMOS is presented in this paper. Since the significant difference in two sides' impedance, the transformer for matching is difficult to achieve. To address that issue, a transform process is proposed for the transformer. The high peak power-added efficiency (PAE) design and the meticulous layout deployment are applied for a good performance. With a supply voltage of 1.1V, this PA achieves a power gain of 25.3dB with the 3-dB gain bandwidth of 11.2GHz (71.8 − 83GHz), a saturated output power of 13dBm, and a peak PAE of 25.7% at 76GHz with power dissipation of 79.2mW. The whole core size is only 0.52 × 0.14𝑚𝑚 2 .

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“…In [9] we have addressed the cryogenic characterization at 2K of the proposed compact switch as a key circuit, i.e., a "qubit size" switch, toward the implementation of monolithic quantum processors. In this paper we present all the features of the proposed compact switch and its complete experimental characterization at room temperature (300 K) for more general purposes in microwave and mm-wave communication and sensing applications [10,11], such as radars [12,13], radiometers [14] and 5G/6G mobile broadband phased-array transceivers [15,16]. The paper is organized as follows.…”

Section: Introductionmentioning

confidence: 99%

A Compact DC-110GHz SPST Switch in 22nm FDSOI CMOS

Nhut

Zito

2023

IEEE Trans. Circuits Syst. II

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This brief reports a compact DC-110GHz single-pole single-throw (SPST) switch in 22nm FDSOI CMOS technology. The switch adopts solely three n-MOSFETs, two of them with a special device option to reduce the substrate parasitic effects, and a third n-MOSFET in parallel to the gate resistance of the series n-MOSFET to improve isolation. Unlike prior wideband mmwave switches, it does not make use of any large passive components, such as spiral inductors, transformers and transmission lines, which are prone to large parasitic effects, including losses, and require large area on silicon. Altogether, the novel switch circuit allows a very compact design, low losses and high isolation performance. The switch exhibits an insertion loss lower than 3.1 dB, an isolation better than 22 dB, and a return loss better than 12 dB, over the entire frequency range from DC to 110 GHz. The area on die amounts to 160 µm 2 , that is up two or more orders of magnitude smaller than prior wideband mm-wave SPST switches.

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1.29-W/mm² 23-dBm 66-GHz Power Amplifier in 55-nm SiGe BiCMOS With In-Line Coplanar Transformer Power Splitters and Combiner

Cited by 22 publications

References 5 publications

Experimental investigation on the performance degradations of the GaN class-F power amplifier under humidity conditions

Experimental investigation on the performance degradations of the GaN class-F power amplifier under humidity conditions

A 13dBm 25.7% PAE 25.3-dB gain E-band power amplifier in 40nm CMOS technology

A Compact DC-110GHz SPST Switch in 22nm FDSOI CMOS

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1.29-W/mm2 23-dBm 66-GHz Power Amplifier in 55-nm SiGe BiCMOS With In-Line Coplanar Transformer Power Splitters and Combiner

Cited by 22 publications

References 5 publications

Experimental investigation on the performance degradations of the GaN class-F power amplifier under humidity conditions

Experimental investigation on the performance degradations of the GaN class-F power amplifier under humidity conditions

A 13dBm 25.7% PAE 25.3-dB gain E-band power amplifier in 40nm CMOS technology

A Compact DC-110GHz SPST Switch in 22nm FDSOI CMOS

Contact Info

Product

Resources

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1.29-W/mm² 23-dBm 66-GHz Power Amplifier in 55-nm SiGe BiCMOS With In-Line Coplanar Transformer Power Splitters and Combiner