2005
DOI: 10.1109/jstqe.2004.841691
|View full text |Cite
|
Sign up to set email alerts
|

1.3-/spl mu/m AlGaInAs strain compensated MQW-buried-heterostructure lasers for uncooled 10-gb/s operation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

1
24
0

Year Published

2007
2007
2024
2024

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 39 publications
(26 citation statements)
references
References 14 publications
1
24
0
Order By: Relevance
“…Moreover, the uncooled InGaAlAs/InP based MQW buried lasing heterostructures have shown great promise for low power-consumption operation data communication links due to their low attenuation property [7]. In addition, InGaAlAs buried lasing heterostructures emitting 1.3 μm wavelength have also exhibited good temperature characteristics for uncooled operations [8].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Moreover, the uncooled InGaAlAs/InP based MQW buried lasing heterostructures have shown great promise for low power-consumption operation data communication links due to their low attenuation property [7]. In addition, InGaAlAs buried lasing heterostructures emitting 1.3 μm wavelength have also exhibited good temperature characteristics for uncooled operations [8].…”
Section: Introductionmentioning
confidence: 99%
“…Such lasing heterostructures, therefore, require the use of expensive cooling devices to stabilize the temperature for lasing operation [10]. Moreover, due to the larger potential conduction band offset ratio, the InGaAlAs/InP lasing heterostructures have shown very high electron confinement factor, reduced auger recombination and reduced threshold current [7,8,[10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…Recently 1.3 µm InGaAlAs BH lasers have shown good temperature characteristics for uncooled operations [2]. There are, however, relatively few reports on 1.55 µm InGaAlAs BH lasers [3][4][5][6].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore such lasers require the use of expensive cooling devices to stabilise the laser operation temperature [4]. Due to the larger potential conduction band offset ratio of the InGaAlAs/InP material system of around InGaAsP/InP heterostructures, the former material system has stronger electron confinement, reduced Auger recombination and reduced threshold current [1][2][3][4][5]. Hence InGaAlAs lasers have better temperature characteristics at wavelengths between 1.3µm and 1.55µm.…”
Section: Introductionmentioning
confidence: 99%
“…DFB lasers are promising light sources for high-bit-rate fiber communication systems because of their stable longitudinal single-mode operations [1][2][3][4][5]. Stable wavelengths of DFB lasers are also required for wavelength division multiplexing (WDM) network systems [6][7][8].…”
Section: Introductionmentioning
confidence: 99%