1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on <i> In Situ</i> Curvature Measurement

Arai, M.; Kobayashi, Wataru; Yamamoto, Tsuyoshi; Matsuo, Shinji

doi:10.1109/jstqe.2015.2420595

Cited by 6 publications

(4 citation statements)

References 29 publications

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“…Over the past several decades significant research effort has been dedicated to the development of III-V semiconductor alloys and quantum-confined heterostructures such as quantum wells [1][2][3][4][5][6] and quantum dots, [7][8][9][10] as platforms for the development of a range of photonic, photovoltaic, and spintronic devices. Despite the widespread of use InP-based quantum well (QW) based devices in optical communications, an important factor limiting overall device performance is the prevalence of temperature-dependent loss mechanisms, including carrier leakage, as well as non-radiative Auger recombination and inter-valence band absorption (IVBA) processes involving transitions between the highest energy valence bands (VBs) and the spin-split-off (SO) band.…”

Section: Introductionmentioning

confidence: 99%

Impact of Disorder on the Optoelectronic Properties of GaNyAs1−x−yBix Al

2018

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We perform a systematic theoretical analysis of the nature and importance of alloy disorder effects on the electronic and optical properties of GaNyAs1−x−yBix alloys and quantum wells (QWs), using large-scale atomistic supercell electronic structure calculations based on the tight-binding method. Using ordered alloy supercell calculations we also derive and parametrise an extended basis 14-band k·p Hamiltonian for GaNyAs1−x−yBix. Comparison of the results of these models highlights the role played by short-range alloy disorder -associated with substitutional nitrogen (N) and bismuth (Bi) incorporation -in determining the details of the electronic and optical properties. Systematic analysis of large alloy supercells reveals that the respective impact of N and Bi on the band structure remain largely independent, a robust conclusion we find to be valid even in the presence of significant alloy disorder where N and Bi atoms share common Ga nearest neighbours. Our calculations reveal that N-(Bi-) related alloy disorder strongly influences the conduction (valence) band edge states, leading in QWs to strong carrier localisation, as well as inhomogeneous broadening and modification of the conventional selection rules for optical transitions. Our analysis provides detailed insight into key properties and trends in this unusual material system, and enables quantitative evaluation of the potential of GaNyAs1−x−yBix alloys for applications in photonic and photovoltaic devices. arXiv:1712.07693v2 [cond-mat.mtrl-sci]

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Section: Introductionmentioning

confidence: 99%

Impact of Disorder on the Optoelectronic Properties of GaNyAs1−x−yBix Al

2018

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“…Our next challenge to developing MQW LDs emitting at 1.3 μm is growth of a metamorphic InGaAs buffer layer on the GaAs/Ge layers. Since all metamorphic InGaAs LDs were grown on on-axis GaAs (100) substrate [17]- [19], it is necessary to develop techniques that enable us to grow metamorphic InGaAs layers on misoriented substrates or antiphase-domain-free GaAs layers on on-axis Si substrates.…”

Section: Gaas Buffer Layer Growth and Annealingmentioning

confidence: 99%

“…To elongate the emission wavelength of the MQWs to 1.3 μm, the GaAs/Ge/Si structure incorporates an InGaAs metamorphic buffer layer. The details of the metamorphic buffer and performance of the LDs on GaAs substrate are described elsewhere [17]- [19].…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers

Arai

Kakitsuka

Matsuo

2018

IEICE Trans. Electron.

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SUMMARYWe demonstrate heteroepitaxial growth of GaAs/Ge buffer layers for fabricating 1.3-μm range metamorphic InGaAs-based multiple quantum well (MQW) lasers in which the Ge buffer layer is grown using a metal-organic Ge precursor, iso-butyl germane, in a conventional metalorganic vapor phase epitaxy reactor. This enables us to grow Ge and GaAs buffer layers in the same reactor seamlessly. Transmission electron microscopy and X-ray diffraction analyses indicate that dislocations are well confined at the Ge/Si interface. Furthermore, thermal-cycle annealing significantly improves crystalline quality at the GaAs/Ge interface, resulting in higher photoluminescence intensity from the MQWs on the buffer layers.

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“…Indeed, since 1994, when the first metamorphic InGaAs/GaAs telecom laser was reported by Uchida et al, only a few working lasers were reported reaching beyond 1.3 μm telecom wavelength, all fabricated using molecular beam epitaxy (MBE), , while metalorganic vapor-phase epitaxy (MOVPE) surprisingly failed in obtaining meaningful results. However, using MOVPE, Nakao et al recently achieved 1.3 μm operation with native QW photoluminescence at 1.27 μm. It is worth stressing that no explanation nor discussion is present in the literature on the limiting factors associated with the MOVPE growth of such structures nor how to overcome them.…”

Section: Introductionmentioning

confidence: 99%

Importance of Overcoming MOVPE Surface Evolution Instabilities for >1.3 μm Metamorphic Lasers on GaAs

Mura

Gocalinska

O'Brien

et al. 2021

Crystal Growth & Design

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We investigated and demonstrated a 1.3 µm-band laser grown by metalorganic vapour phase epitaxy (MOVPE) on a specially engineered metamorphic parabolic graded InxGa1-xAs buffer and epitaxial structure on a GaAs substrate. Bottom and upper cladding layers were built as a combination of AlInGaAs and InGaP alloys in a superlattice sequence. This was implemented to overcome (previously unreported) detrimental surface epitaxial dynamics and instabilities: when single alloys are utilised to achieve thick layers on metamorphic structures, surface instabilities induce defect generation. This has represented a historically limiting factor for metamorphic lasers by MOVPE. We describe a number of alternative strategies to achieve smooth surface morphology to obtain efficient compressively strained In0.4Ga0.6As quantum wells in the active layer. The resulting lasers exhibited low lasing threshold with total slope efficiency of 0.34 W/A for a 500 µm long ridge waveguide device. The emission wavelength is extended as far as 1360 nm.

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1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement

Cited by 6 publications

References 29 publications

Impact of Disorder on the Optoelectronic Properties of GaNyAs1−x−yBix Al

Impact of Disorder on the Optoelectronic Properties of GaNyAs1−x−yBix Al

Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers

Importance of Overcoming MOVPE Surface Evolution Instabilities for >1.3 μm Metamorphic Lasers on GaAs

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