1.3 μm InGaAsP/InP capped mesa buried heterostructure laser with an undoped cladding layer in base epitaxial growth

Swaminathan, V.; Reynolds, C. L.; Geva, M.

doi:10.1063/1.367316

Cited by 3 publications

(1 citation statement)

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“…This series of devices with different and identical current blocking offered an opportunity to separate "edge" current from active region current. Details of the structure design and growth can be found elsewhere [7]. We fabricated lasers with mesa widths of 1, 10, 60, and 100 m. The measured dependence of the threshold current on mesa width for 300-m cavity-length devices is shown in Fig.…”

Section: Experiments and Resultsmentioning

confidence: 99%

Direct measurement of lateral carrier leakage in 1.3-/spl mu/m InGaAsP multiple-quantum-well capped mesa buried heterostructure lasers

Belenky

Shterengas

Reynolds³

et al. 2002

IEEE J. Quantum Electron.

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1.3-m InGaAsP multiple-quantum-well (MQW)capped mesa buried heterostructure (CMBH) lasers with mesa widths ranging from 1 m (standard single mode) to 100 m (wide area) were fabricated on one wafer with identical current blocking layers at the sides. The single-mode devices had three times larger nominal threshold current density than the wide-area devices. Measurement of gain and loss in the devices showed the single-mode devices to have 6-8 cm 1 higher loss and 40% lower optical confinement than the wide-area devices. Beyond these differences, the measurements show that up to 30% of the threshold current in the single-mode CMBH lasers does not contribute to the pumping of the MQW active region. Injection efficiency is measured to be close to unity for both single-mode and wide mesa devices. Scenarios to explain this parasitic current are discussed, including the potential role for nonradiative recombination centers at the regrown epitaxial interface, which can be consistent with all of the experimental results.Index Terms-Carrier leakage, lateral leakage, semiconductor laser, single-mode laser.

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Section: Experiments and Resultsmentioning

confidence: 99%