1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode

Bian, Zijun; Rae, Katherine J.; McKenzie, Adam F.; King, Ben C.; Babazadeh, N.; Li, Guangrui; Orchard, Jonathan R.; Gerrard, Neil D.; Thoms, S.; MacLaren, Donald A.; Taylor, Richard J. E.; Childs, David; Hogg, R. A.

doi:10.1109/lpt.2020.3039059

Cited by 25 publications

(7 citation statements)

References 28 publications

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“…Recent developments in photonic crystal (PhC)-based lasers have demonstrated superior performance to commonly used vertical cavity surface-emitting lasers (VCSELs) and edge emitting lasers. [1][2][3][4] The single-mode operation, high modulation frequency and brightness, [5,6] and symmetric beam profiles with In this work, we demonstrate GaAs/InGaAs nanowires selectively grown on SOI substrate as a material platform for surface-emitting telecom lasers and potential topological cavity lasers. In contrast to a square lattice which uses off-Γ symmetry points, [15,23] these nanowires are arranged into deformed honeycomb lattices to access Γ point band edge modes for highly directional vertical emission.…”

Section: Introductionmentioning

confidence: 96%

“…Recent developments in photonic crystal (PhC)‐based lasers have demonstrated superior performance to commonly used vertical cavity surface‐emitting lasers (VCSELs) and edge emitting lasers. [ 1–4 ] The single‐mode operation, high modulation frequency and brightness, [ 5,6 ] and symmetric beam profiles with excellent narrow beam divergence [ 7 ] make them highly promising for light detection and ranging [ 8 ] and optical sensing applications. Conventionally, top‐down nanofabrication processes are used for fabricating PhC surface‐emitting lasers (PCSELs) as well as emerging topological cavity surface‐emitting lasers.…”

Section: Introductionmentioning

confidence: 99%

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Deformed Honeycomb Lattices of InGaAs Nanowires Grown on Silicon‐on‐Insulator for Photonic Crystal Surface‐Emitting Lasers

Messina

Gong

Abouzaid

et al. 2022

Advanced Optical Materials

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excellent narrow beam divergence [7] make them highly promising for light detection and ranging [8] and optical sensing applications. Conventionally, top-down nanofabrication processes are used for fabricating PhC surface-emitting lasers (PCSELs) as well as emerging topological cavity surface-emitting lasers. [9][10][11][12] Over the last few years, selective area, catalyst-free growth of nanowires has progressed rapidly, providing a unique platform for ultracompact bottom-up PhC lasers. [13][14][15][16] In comparison to top-down etched PhC cavities, the vertical and atomically flat sidewall surface and the ability to form in situ passivation layers in nanowire growth minimize scattering and propagation losses and thereby preserve high radiative recombination efficiency. By breaking or relaxing the constraints from materials lattice mismatch, combining dissimilar materials into 3D axial and core-shell structures with strong quantum confinement and direct epitaxial integration on technologically important substrates such as silicon-on-insulator (SOI) chips also become possible. Optically pumped lasing from a lift-off 2D GaAs/InGaAs/GaAs nanowire arrays was realized emitting at wavelengths between 960 and 989 nm. [17] Near vertical surface emission around 850 nm from an InP nanowire PhC structure on InP substrate was recently reported, exhibiting pulse lasing at room temperature as well as continuous-wave lasing at 77 K with an output power of 470 µW. [18] Electrically pumped surface-emitting laser diodes using bottom-up PhC cavities have so far only been achieved by InGaN/AlGaN nanowires [1] and remain one of the biggest challenges in III-As/P based nanowires. For practical integration of nanowire lasers with silicon photonic integrated circuits and silicon electronics, direct growth of nanowire lasers on silicon operating in the relevant telecom spectral bandwidth (1.3-1.55 µm) is crucial. To date, this has been developed using either bandgap tunable InGaAs nanowire-based 1D or 2D PhC arrays [15,[19][20][21] or straincompensated InGaAs/(In,Al)GaAs multiquantum-well nanowires. [22] Despite impressive waveguide-coupled lasing at room temperature and low-threshold characteristics that have been demonstrated, a surface-emitting telecom wavelength nanowire PhC laser, which could be of great interest for optical sensing applications, has not been reported yet.Photonic crystals can be used to achieve high-performance surface-emitting lasers and enable novel photonic topological insulator devices. In this work, a GaAs/InGaAs heterojunction nanowire platform by selective area metalorganic vapor phase epitaxy for such applications is demonstrated. The nanowires are arranged into deformed honeycomb lattices on silicon-on-insulator substrate to exploit the quadrupolar photonic band-edge mode. Coreshell and axial heterostructures are formed with their crystalline properties studied by scanning transmission electron microscopy. Room-temperature, single mode lasing from both stretched and compressed honeycomb lattices within th...

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Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Deformed Honeycomb Lattices of InGaAs Nanowires Grown on Silicon‐on‐Insulator for Photonic Crystal Surface‐Emitting Lasers

Messina

Gong

Abouzaid

et al. 2022

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

“…Alternative approaches, including bonded dielectric DBRs and high contrast gratings (HCG), have been proposed by various groups. However, these processes are complex for mass production. − Recently, PCSELs with emitting wavelengths around 1.3–1.5 μm have been developed and reported. − PCSELs do not require DBRs for a resonant cavity, further highlighting their advantages in this wavelength range. Moreover, due to the scaling law of the photonic band, PC structures are large enough to be generated using deep ultraviolet (DUV) lithography instead of electron-beam lithography, facilitating volume production.…”

Section: Introductionmentioning

confidence: 99%

Metal Organic Chemical Vapor Deposition-Grown High-Power Photonic-Crystal Surface-Emitting Lasers toward L Band

Chen,

Chang,

et al. 2023

Crystal Growth & Design

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High-power lasers emitting in the L band wavelength range are highly desirable for various applications, including light detection and ranging, industrial applications, military applications, gas sensing, and optical communication. In this study, we present our research on InP-based photonic-crystal surface-emitting lasers (PCSELs) designed to achieve high-power emission in the L band while maintaining a compact device size. To enable vertical laser emission, we incorporated embedded air voids within a 2D photonic crystal (PC) structure by epitaxial overgrowth. The PC was carefully designed to facilitate lasing at the PC band edge of the Γ point. While the fabrication of InP-based distributed feedback edge-emitting lasers with epitaxial regrowth and p-type cladding layers has reached commercial maturity, the process of retaining air holes presented unique challenges in our work. We conducted an investigation into the regrowth processes, aiming to preserve the air voids while achieving an atomically flat p-type surface for our flip-chip device structure. The flat surface is crucial to minimize scattering losses and ensure optimal reflectivity of the p-side metal, resulting in higher output efficiency. The PCSELs demonstrated in our study achieved an optical power of more than 150 mW in the L band, utilizing an aperture of only 280 μm in diameter. We anticipate that with further optimization, we can achieve even higher power and efficiency levels.

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“…The move to epitaxial regrowth by metalorganic vapour phase epitaxy (MOVPE) has demonstrated a pathway to high volume production of highly reliable devices leveraging all the knowledge gained over many years of InP DFB development. InP devices emitting at 1310 nm 18 , 19 and 1550 nm 20 have already been demonstrated using this approach. To date, PCSELs have demonstrated single mode operation 7 , low beam divergence 8 , polarization and beam shape control 9 , 21 – 24 , making these devices ideal candidates for coupling efficiently to single mode fibre without the need for costly beam shaping optics.…”

Section: Introductionmentioning

confidence: 99%