1.54-μm photoluminescence from Er-implanted GaN and AlN

Wilson, R. G.; Schwartz, Robert N.; Abernathy, C. R.; Pearton, S. J.; Newman, Nathan; Rubín, M.; Fu, Tao; Zavada, J. M.

doi:10.1063/1.112172

Cited by 202 publications

(93 citation statements)

References 9 publications

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] In particular, the large band gaps of GaN, AlN, and their alloys allow emission of higher energy rare earth transitions that are otherwise absorbed in smaller band gap host materials. Therefore, these materials may have application in visible displays or in white light systems that employ color-combining techniques.…”

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Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Zavada

Nepal

Lin

et al. 2006

Applied Physics Letters

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Deep ultraviolet emission from gadolinium ͑Gd͒-implanted AlN thin films has been observed using photoluminescence ͑PL͒ spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of ϳ6 ϫ 10 14 cm −2 . Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

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confidence: 99%

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Zavada

Nepal

Lin

et al. 2006

Applied Physics Letters

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“…[4][5][6][7][8][9][10][11][12] GaN is a wide band-gap III-V semiconductor useful as a short wavelength emitter and detector. 13 Previous investigations of Er luminescence in GaN:Er have been promising with most researchers finding only an ϳ50% decrease in photoluminescence intensity over the temperature range 6-300 K. 4,8,9,11 This is a significant improvement over the two-to-three order of magnitude decrease of Er luminescence intensity in GaAs:Er. 2 The studies performed on GaN:Er so far have principally focused on Er implanted into GaN.…”

Section: ͓S0003-6951͑98͒02010-5͔mentioning

confidence: 99%

Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

Hansen

Zhang

Perkins

et al. 1998

Applied Physics Letters

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The photoluminescence of in situ-doped GaN:Er during hydride vapor phase epitaxy was compared to an Er-implanted GaN sample. At 11 K, the main emission wavelength of the in situ-doped sample is shifted to shorter wavelengths by 2.5 nm and the lifetime is 2.1Ϯ0.1 ms as compared to 2.9Ϯ0.1 ms obtained for the implanted sample. The 295 K band edge luminescence of the in situ-doped sample was free of the broad band luminescence centered at 500 nm which dominated the spectrum of the implanted sample. Reversible changes in the emission intensity of the in situ-doped sample upon annealing in a N 2 versus a NH 3 /H 2 ambient indicate the probable role of hydrogen in determining the luminescence efficiency of these samples. © 1998 American Institute of Physics. ͓S0003-6951͑98͒02010-5͔The rare-earth element erbium in the trivalent state (Er 3ϩ ) has received considerable attention since the 4 I 13/2 → 4 I 15/2 transition at 1540 nm coincides with a minimum in loss in silica optical fibers.1 This transition occurs between energy levels within the shielded 4 f electron shell, making the optical transitions of Er 3ϩ sharp, as well as relatively insensitive to temperature and host affects.2 These luminescence properties make erbium-doped semiconductors an appealing material system for application in optoelectronic devices.One problem which plagues the development of a practical erbium-doped semiconductor device is the pronounced temperature quenching of the rare-earth luminescence within most semiconductor hosts. Favennec et al. discovered that quenching of the rare-earth luminescence was reduced in wide band-gap semiconductor hosts.3 This discovery has lead to several investigations of Er-implanted GaN. [4][5][6][7][8][9][10][11][12] GaN is a wide band-gap III-V semiconductor useful as a short wavelength emitter and detector. 13 Previous investigations of Er luminescence in GaN:Er have been promising with most researchers finding only an ϳ50% decrease in photoluminescence intensity over the temperature range 6-300 K. 4,8,9,11 This is a significant improvement over the two-to-three order of magnitude decrease of Er luminescence intensity in GaAs:Er. 2The studies performed on GaN:Er so far have principally focused on Er implanted into GaN. The large mass of the Er implant species limits this technique to the formation of thin layers of GaN:Er with a high amount of residual implantrelated damage. In this letter, we report a photoluminescence study of in situ-doped GaN:Er during hydride vapor phase epitaxy ͑HVPE͒ using elemental Er as the in situ dopant and Er implanted into nominally undoped GaN also grown by HVPE. HVPE is an established technique for GaN growth and is capable of providing high growth rates and thick GaN layers. 13,14 The in situ doping of GaN with Er during HVPE growth should result, therefore, in thick, uniformly doped layers. Low temperature Er 3ϩ luminescence of the in situdoped sample is observed with the peak intensity at 1536.5 nm and an 11 K lifetime of 2.1Ϯ0.1 ms. The Er 3ϩ luminescence was no lon...

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“…III-V semiconductors doped with rare-earth elements have also been used 10,11,12,13,14,15,16,17,18 and have advantages compared to narrow bandgap materials 19 . The advantage of Nakamura's devices is their extremely high quantum efficiency 1 (~5%), whereas RE doped devices offer multiple color emission, wavelength-limited only by the RE element(s) chosen and not by the band gap energy of the semiconductor.…”

Section: Introductionmentioning

confidence: 99%