1.55 µm spot-size converter integrated polarization-insensitive quantum-well semiconductor optical amplifier with tensile-strained barriers

Abstract

A 1.55 µm polarization-insensitive lateral tapered spot-size converter integrated semiconductor optical amplifier (SSC-SOA) with tensile-strained barriers was investigated. The optical amplifier structure used a conventional ridge guide for the active layers and a second larger ridge for the passive waveguide. Low beam divergence of 12 • × 15 • results in about 3.1 dB coupling losses with −1 dB positional tolerances of ±2.3 µm and ±1.6 µm in horizontal and vertical directions using an anti-reflection coated flat-ended single-mode fibre. The active layer of SSC-SOA consisted of a tensile-strained barrier multiple-quantum-well structure. The SSC-SOA exhibited a signal gain of 25.5 dB and a saturation output power of 11.2 dB m with excellent polarization insensitivity (less than 0.5 dB) at 200 mA.

SOA Model and Design Guidelines in Lossless Photonic Subsystem

“…Eventually, for low ER input signals, in Eqs. ( 19) and (20), G l must be used instead of G 0 . The analytical results of Q-factor behavior versus input power are represented in Figure 10.…”

“…Developing SOA is challenging on both pure InP platforms and hybrid III-V-on-silicon platforms. Specific coupling/bonding techniques are required such as flip-chip bonding [16,17], die-to-wafer bonding [18], edge coupling [19], spot size converter (SSC) [20] and chip-to-chip butt coupling [21]. Furthermore, SOA monolithically integrated with photodiodes has been proposed as a promising technique for low-cost, highspeed, high-sensitivity SOA_PIN receivers [22,23].…”

A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique

“…[1][2][3] A significant amount of research has been carried out into the development of high-performance QD lasers and QD SOAs, as they offer advantages such as low threshold current, temperature stability, high modulation bandwidth, low chirp, and high speed response as compared to QW devices. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] To develop these high-performance devices, the surface QD density can be increased by fabricating a structure in which the QDs are vertically stacked. 23) However, the number of layers that can be stacked by conventional techniques is limited by the accumulation of strain.…”

A Review of Polarization Dependence Applications for Asymmetric Waveguides Vertical Couplers in Compound Semiconductor Indium Phosphide

“…Due to these advantages, the vertical coupler structure, being one form of spot-size converter or sometimes being denoted as asymmetric twin waveguides technology (ATG), has been studied in details [21][22][23] and utilized in diverse applications [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43].…”