1‐6 GHz 4 W MMIC GaAs high power amplifier

Abstract

This article presents the design of a monolithic high power amplifier with 4 W output power in the 16 GHz band (2.5 octave).The amplifier uses two gain stages composed by four and eight transistors. Power united monolithic semiconductor PPH25x process, on GaAs substrate with 70 mu m thickness, has been used. The Montecarlo analysis shows a small-signal gain's average value of 24 dB and output power levels higher than 36 dBm. (c) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:27472751, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.2720

A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n

“…Once ISM 2. 4 GHz band provides a maximum of 54 Mbps when operating in the orthogonal frequencydivision multiplexing (OFDM) mode. To avoid bandwidth and bit rate limitation, a 5 GHz unlicensed national information infrastructure (U-NII) band which obtains 12 non-overlapping channels was adopted, which is more than 10 times faster than 2.4 GHz can get.…”