1–7 GHz wideband low loss SPDT switch MMIC

Verma, Prolay; Kumar, Ajay; Bhattacharya, Amartya Kumar; Arora, Rajkumar

doi:10.1109/conecct.2015.7383880

Cited by 11 publications

(1 citation statement)

References 9 publications

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“…GaAs pHEMT switches are abundantly used in low loss and high integration design [2][3]. In recent research reports, Reference [4] used a series-shunt topology to achieve 1-7 GHz SPDT, the insertion loss is less than 1.1 dB, the isolation is above 28 dB, and the typical 𝑃 is 18dBm at 5 GHz. In [5], the isolation performance of an X-band switch was improved to 33dB by adopting shunt RC network compensation, which has 20 dBm of 𝑃 of 10 GHz.…”

Section: Introductionmentioning

confidence: 99%

Design of DC-18 GHz high-isolation and high-power SPDT

Huang,

Ma,

Chen

2024

Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023)

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A single blade double-throw (SPDT) switch for transceiver/receiver (T/R) module applications with wide band, high power, and high isolation is presented in this paper. The switch operates in the frequency range of DC-18 GHz and is realized by series-shunt topology. To improve the power-handling capability, stacked FET transistors are used. An inductor is inserted into the internal shunt transistor to improve switch isolation and return loss performance within the operating frequency band. This SPDT is realized using 0.25-μm GaAs pHEMT technology, and its size is 0.94 mm × 0.94 mm. The electromagnetic (EM) simulation results indicated that the design offers a low insertion loss of 2.1 dB and high isolation of 48.9 dB. The input 1-dB power compression point (𝑃 ) is 32.4 dBm @ 12 GHz.

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Section: Introductionmentioning

confidence: 99%

Design of DC-18 GHz high-isolation and high-power SPDT

Huang,

Ma,

Chen

2024

Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023)

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A broadband low‐loss SPDT RF switch using a new off‐chip compensation technology

Gong,

Cheng,

et al. 2024

Circuit Theory & Apps

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SummaryAn off‐chip compensation technology for low‐loss and broadband characteristics of radio frequency (RF) switches is proposed based on mathematical analysis of series shunt single pole double throws switches in this letter. This compensation technology can absorb the parasitic parameters of the switch Field Effect Transistor, improving the insertion loss and return loss of the switch as well as supporting higher bandwidth. To verify the design principle, a RF switch, using the SANAN GaAs 0.15 um pseudomorphic High Electron Mobility Transistors (pHEMT) process, and an off‐chip compensation network were designed and implemented. Specifically, after using an off‐chip compensation network, the measured bandwidth of switch has been expanded from 1.1–8.8 to 0.8–11 GHz, while the input and output return loss have also improved significantly.

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A FI-SPDT with high isolation based on design method of transfer function

Lv,

Liu,

et al. 2024

Microelectronics Journal

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1–7 GHz wideband low loss SPDT switch MMIC

Cited by 11 publications

References 9 publications

Design of DC-18 GHz high-isolation and high-power SPDT

Design of DC-18 GHz high-isolation and high-power SPDT

A broadband low‐loss SPDT RF switch using a new off‐chip compensation technology

A FI-SPDT with high isolation based on design method of transfer function

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