1.866–2.782-GHz Reconfigurable Filtering Single-Pole-Multithrow Switches Based on Evanescent-Mode Cavity Resonators

Lai, Junchen; Yang, Tao; Chi, Pei‐Ling; Xu, Ruimin

doi:10.1109/tmtt.2020.3039960

Cited by 8 publications

(2 citation statements)

References 38 publications

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“…In [3] ,Xi'an Institute of Electronic Engineering proposed a series-parallel structure of PIN diodes embedded in an impedance matching circuit, combining two quasi-elliptical response bandpass filters to form an SPDT switch, but the circuit size is relatively large; [4] developed a 1 GHz fixed-response filter-integrated SPDT switch using a capacitively coupled LC resonator loaded with pin diodes, and designed a frequency-tunable filter-integrated switchless SPDT switch using a varactor diode, but it has low filter frequency due to lumped elements. In [5], The University of Electronic Science and Technology of China has proposed a novel reconfigurable filtered single-pole-multi-throw (SPMT) switch based on an Evanescent Mode Cavity (EVA), which controls the varactor to change the coupling coefficient between the resonators and keeps the corresponding signal paths in an isolated state or band-pass filter response state, but the production cost is higher. At present, more research focus on the filter integrated switch with fixed frequency response, while the complexity of modern RF systems is getting higher and higher, and there are applications such as common antenna, cross-band, and multiple frequency points.…”

Section: Introductionmentioning

confidence: 99%

A Design of Tunable Filter Integrated SPDT Switch Based on PIN Diode

Jing

Cui

2022

J. Phys.: Conf. Ser.

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In this paper, a tunable filter integrated SPDT switch based on PIN diode is proposed. The band-pass filter response is realized by using microstrip lines with different characteristic impedances, and the filter-integrated SPDT switch with tunable center frequency is designed by loading a varactor diode and PIN diodes. The measured results show that its filter response can be tuned in the range of 1.5 to 2.065 GHz, the insertion loss is 1.53-2.69 dB, and with well return loss and port isolation.

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Section: Introductionmentioning

confidence: 99%

A Design of Tunable Filter Integrated SPDT Switch Based on PIN Diode

Jing

Cui

2022

J. Phys.: Conf. Ser.

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“…Substrate integrated waveguide (SIW) technology paved the way for implementing easily-integrable compact-size microwave devices with high unloaded quality factor and high-power handling capability [11], [12], [13]. Moreover, a wide variety of SIW switching topologies have been studied and implemented, such as single-pole, single-throw (SPST) [14], [15], [16], single-pole, double-throw (SPDT) [16], [17], [18], and single-pole, multiple-throw (SPMT) switches [19]. Despite the state-of-the-art performance of the previously-stated switching topologies, they all have low switching speeds.…”

mentioning

confidence: 99%

Novel High-Performance SIW Cavity-Based Switching Structures

El-Gendy,

Khater,

Abdelaziem

et al. 2024

IEEE Trans. Microwave Theory Techn.

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In this article, novel architectures for high-speed substrate integrated waveguide (SIW) filtering switches with high-power handling are presented. A four-port filtering doublepole, double-throw (DPDT) switch and a three-port filtering routing switch are demonstrated as a proof-of-concept. For both switches, the structure consists of a main switching circular cavity with concentric posts. These posts enable the excitation of multiple resonant modes. The resonant modes are aligned in frequency using loading capacitances. p-i-n-diodes are used to short loading posts. Consequently, the generated fields interfere constructively and destructively at the output ports. Concept-proving structures are designed, implemented, and measured. For the SIW-DPDT switch, a measured insertion loss and isolation of 2.95 and 26 dB are achieved, respectively, at 7.4 GHz. Furthermore, a 2.98 and 30 dB measured insertion loss and isolation are obtained for the SIW-routing switch, respectively, at 7.7 GHz. The measured insertion losses include the losses of the filtering cavities. The proposed structures share the same switching technique. As a result, the power handling measurements are performed only for the routing switch, which is measured to handle 40 dBm of input power. Also, the employed switching technique is demonstrated to exhibit a switching speed of less than 80 ns.

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