1.9-W quasi-CW from a near-diffraction-limited 1.55-μm InGaAsP-InP tapered laser

Cho, S.H.; Fox, S.; Johnson, F.G.; Vusirikala, V.; Stone, D.R.; Dagenais, M.

doi:10.1109/68.701512

Cited by 11 publications

(2 citation statements)

References 9 publications

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“…Although the lateral dimension, its width, is being changed, for this case since the vertical dimension, its height, remained constant (and the guide remained single moded in the vertical direction), the vertical field profile does not change as the evolving optical beam is modified in the lateral direction. Subsequently, a more typical tapered structure with a large waveguide width [17], suitable for high-power semiconductor amplifiers, has been considered. In this case, the initial width of the guide is taken as 4 µm, with its core height being 1.0 µm.…”

Section: Resultsmentioning

confidence: 99%

Mode beating in tapered high-power lasers

et al. 2004

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The evolution of the optical beam profile along a high-power tapered semiconductor amplifier has been demonstrated by using a rigorous finite element-based and full-vectorial modal solution, coupled with the beam propagation approach. Numerically simulated results indicate that many higher order modes are generated and propagate along the tapered structure and their interference with the fundamental mode causes variations of the optical beam, both along the transverse and the axial directions, which significantly modify the output beam quality.

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Section: Resultsmentioning

confidence: 99%

Mode beating in tapered high-power lasers

et al. 2004

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“…This beam is fed into the tapered gain section, where the mode is allowed to freely diffract and amplified by a tapered electrical contact. Tapered devices have been shown to reach optical output powers >1 W while maintaining near diffraction-limited beams, but achieving higher power levels with near diffraction-limited performance has shown to be challenging because of filamentation at relatively low powers and poor yields due to beam quality deterioration at high powers [7][8][9][10][11] .…”

Section: Advances In Near Diffraction Limited Operation: 980 Nm Devices With 3w Tapered Emittersmentioning

confidence: 99%

Advances in high-brightness semiconductor lasers

Osowski

Lammert

et al. 2008

SPIE Proceedings

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We review recent advances in high power semiconductor lasers including increased spectral brightness, increased spatial brightness, and reduced cost architectures at wavelengths from the near infrared to the eye-safe regime. Data are presented which demonstrate both edge emitter devices and high power surface emitting 2-dimensional arrays with internal gratings to narrow and stabilize the spectrum. Diodes with multimode high spatial brightness and high power single mode performance in the 808 and 976nm regime are described, and advances in high power bars at eye-safe wavelengths are presented. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.Keywords: Diode, laser, semiconductor, bar, stack, array IntroductionConventional edge emitting high power diode lasers have been used in printing, defense, medical, and materials processing because of their compactness, low cost per Watt-hour, and excellent electrical to optical efficiency. While these high power diode lasers are broadly accepted for low brightness applications, their use has been limited due to the low spatial and spectral brightness performance, costly power scaling, and limited range of emission wavelengths. In particular, the spatial beam quality from high power diode lasers is a factor of 10-20 times lower than non-diode lasers such as gas, solid state, or fiber laser counterparts. Moreover, the spectral output of conventional diode lasers is typically an order of magnitude wider than these non-diode systems and is inadequate for efficient wavelength conversion or other pumping applications requiring narrow linewidth. Power scaling is achieved by combining the output of individually mounted bars, the cost of which scales linearly or superlinearly with power. Finally, the range of wavelengths available commercially from high power conventional diode lasers has mainly been limited to broadband emission in the near infrared regime of 800 nm to 980 nm.

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